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1.发明申请METHOD OF MANUFACTURING A SEMICONDUCTOR ON INSULATOR STRUCTURE BY A PRESSURIZED BOND TREATMENT 审中-公开通过加压粘结处理制造绝缘体结构上的半导体的方法
公开(公告)号：WO2017155804A1
公开(公告)日：2017-09-14
申请号：PCT/US2017/020614
申请日：2017-03-03
Applicant: SUNEDISON SEMICONDUCTOR LIMITED
Inventor： ERK, Henry Frank , KWESKIN, Sasha Joseph
IPC: H01L21/762
CPC classification number: H01L21/76254 , H01L21/324
Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.
Abstract translation: 提供了一种用于制备包括高压键合步骤的绝缘体上半导体结构的方法。
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2.发明申请SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A PLASMA OXIDE LAYER AND METHOD OF MANUFACTURE THEREOF 审中-公开包含等离子体氧化物层的绝缘体结构半导体及其制造方法
公开(公告)号：WO2017155806A1
公开(公告)日：2017-09-14
申请号：PCT/US2017/020623
申请日：2017-03-03
Applicant: SUNEDISON SEMICONDUCTOR LIMITED
Inventor： KWESKIN, Sasha Joseph
IPC: H01L21/762 , H01L21/02
Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.
Abstract translation: 提供了一种用于制备绝缘体上半导体结构的方法，该绝缘体上半导体结构包括具有氧浓度梯度的氧氮化硅层。
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3.发明申请SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A PLASMA NITRIDE LAYER AND METHOD OF MANUFACTURE THEREOF 审中-公开包含等离子体氮化层的绝缘体结构半导体及其制造方法
公开(公告)号：WO2017155808A1
公开(公告)日：2017-09-14
申请号：PCT/US2017/020634
申请日：2017-03-03
Applicant: SUNEDISON SEMICONDUCTOR LIMITED
Inventor： KWESKIN, Sasha Joseph
IPC: H01L21/762 , H01L21/02
CPC classification number: H01L21/76254 , H01L21/0214 , H01L21/02274 , H01L21/0262 , H01L27/1203
Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Abstract translation: 提供了一种用于制备包括通过等离子体沉积沉积的氮化硅层的绝缘体上半导体结构的方法。
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4.发明申请SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A LOW TEMPERATURE FLOWABLE OXIDE LAYER AND METHOD OF MANUFACTURE THEREOF 审中-公开包含低温可流动氧化物层的绝缘体结构半导体及其制造方法
公开(公告)号：WO2017155805A1
公开(公告)日：2017-09-14
申请号：PCT/US2017/020619
申请日：2017-03-03
Applicant: SUNEDISON SEMICONDUCTOR LIMITED
Inventor： KWESKIN, Sasha Joseph
IPC: H01L21/762 , H01L21/20
Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.
Abstract translation: 提供了一种用于制备包括可流动绝缘层或可回流绝缘层的绝缘体上半导体结构的方法。
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