公开(公告)号：WO1991013465A1

公开(公告)日：1991-09-05

申请号：PCT/US1991001146

申请日：1991-02-22

Applicant: SYMETRIX CORPORATION

Inventor： SYMETRIX CORPORATION ,  PAZ DE ARAUJO, Carlos, A. ,  MCMILLIAN, Larry, D.

IPC: H01L29/78

CPC classification number: H01L29/513 ,  H01L27/11502 ,  H01L29/475 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/739 ,  H01L29/7391 ,  H01L29/803 ,  H01L29/808

Abstract: A device (1) having a semiconductor junction whose electrical charge volume is controlled by a ferroelectric element (5). The ferroelectric (5) establishes the level of leakage of the pn junction to provide a gate-controlled diode or transistor device. The bipolar three-terminal gated diode may be used in memory matrices, neural synaptic networks, DRAM units, bipolar transistors, JFETs, and gallium arsenide and AlGaAs heterostructures.

Abstract translation: 一种具有半导体结的器件（1），其电荷量由铁电元件（5）控制。 铁电体（5）建立了pn结的泄漏电平，以提供栅极控制二极管或晶体管器件。 双极三端门控二极管可用于存储器矩阵，神经突触网络，DRAM单元，双极晶体管，JFET以及砷化镓和AlGaAs异质结构。