公开(公告)号：WO2013165889A8

公开(公告)日：2014-03-20

申请号：PCT/US2013038624

申请日：2013-04-29

Applicant: SYNOS TECHNOLOGY INC

Inventor： LEE DANIEL HO ,  PAK SAMUEL S ,  YANG HYOSEOK ,  LEE SANG IN

IPC: C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32568

Abstract: A radical reactor including an elongated structure received within a chamber of a body of the radical reactor. Radicals are generated within a radical chamber formed in the elongated structure by applying a voltage signal across the elongated structure and an electrode extending within the radical chamber. The radicals generated in the radical chamber are routed via a discharge port of the elongated structure and a conduit formed in the body of the radical reactor onto the substrate. The discharge port and the conduit are not aligned so that irradiation generated in the radical chamber is not directed to the substrate

Abstract translation: 一种自由基反应器，包括接收在自由基反应器主体的室内的细长结构。 通过在细长结构上施加电压信号和在自由腔内延伸的电极，在形成在细长结构中的自由腔室内产生自由基。 在自由腔中产生的自由基通过细长结构的排出口和形成在自由基反应器的主体中的管道被引导到基底上。 排出口和管道不对齐，使得在自由腔室中产生的照射不被引导到基底

公开(公告)号：WO2010019007A3

公开(公告)日：2010-04-15

申请号：PCT/KR2009004528

申请日：2009-08-13

Applicant: SYNOS TECHNOLOGY INC ,  LEE SANG IN

Inventor： LEE SANG IN

IPC: H01L21/205

CPC classification number: C23C16/45551 ,  C23C16/4412

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置成通过基底和反应模块之间的相对运动使基底通过反应模块。 反应模块可以包括用于将第二材料注入到基底的注入单元。 形成薄膜的方法包括将衬底放置在腔室中，在腔室中填充第一材料，相对于腔室中的反应模块移动衬底，以及在衬底通过反应模块时向衬底注入第二材料。

公开(公告)号：WO2012112584A2

公开(公告)日：2012-08-23

申请号：PCT/US2012025095

申请日：2012-02-14

Applicant: SYNOS TECHNOLOGY INC ,  LEE SANG IN

Inventor： LEE SANG IN

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/513 ,  C23C16/308 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45551

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract translation: 使用氮化合物混合物的自由基进行原子层沉积（ALD）以增加沉积在衬底上的层的沉积速率。 氮化合物气体的混合物被注入自由基反应器。 化合物气体的等离子体是通过在自由基反应器中的两个电极之间施加电压而产生的，以产生氮化合物气体的自由基。 自由基被注入到先前注入源前体的衬底表面上。 自由基起到反应物前体的作用并在基底上沉积一层材料。

公开(公告)号：WO2010085081A2

公开(公告)日：2010-07-29

申请号：PCT/KR2010000360

申请日：2010-01-20

Applicant: SYNOS TECHNOLOGY INC ,  LEE SANG IN

Inventor： LEE SANG IN

IPC: H01L31/042

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1884 ,  Y02E10/50

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor cam be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

Abstract translation: 一种电极结构，包括：半导体结，包括n型半导体层和p型半导体层; 在p型半导体层上的空穴溢出层; 以及在孔ex层上的透明电极层。 该电极结构进一步包括位于孔外绝缘层和透明电极层之间的导电层。 在电极结构中，空穴散发层，导电层和透明电极层中的一个或多个可以通过原子层沉积形成。 在电极结构中，由退化的n型氧化物半导体形成的透明电极不会与p型半导体直接接触，并且因此可以减少在p型半导体凸轮中产生的空穴的湮灭或复合， 提高载波生成效率。 此外，透明电极的电导率通​​过导电层而增加，这提高了器件的电特性。

公开(公告)号：WO2010095901A3

公开(公告)日：2010-11-25

申请号：PCT/KR2010001076

申请日：2010-02-22

Applicant: SYNOS TECHNOLOGY INC ,  LEE SANG IN

Inventor： LEE SANG IN

IPC: H01L21/205

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可以包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：WO2010019008A3

公开(公告)日：2010-04-15

申请号：PCT/KR2009004529

申请日：2009-08-13

Applicant: SYNOS TECHNOLOGY INC ,  LEE SANG IN

Inventor： LEE SANG IN

IPC: H01L21/205

CPC classification number: C23C16/4412 ,  C23C16/45551 ,  C23C16/45563

Abstract: A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.

Abstract translation: 气相沉积反应器包括反应模块，其包括用于将第一材料注入到基底上的第一注射单元。 至少一个第二注射单元被放置在第一注射单元内，用于将第二材料注射到基底上。 基板通过反应模块通过基板和反应模块之间的相对运动。 气相沉积反应器有利地将多种材料注入到衬底上，同时衬底通过反应模块而不将衬底暴露在腔室中的大气中。