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    ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS
    1.
    发明申请
    ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS 审中-公开
    使用放射线对基板上的层进行增强沉积

    公开(公告)号：WO2012112795A1

    公开(公告)日：2012-08-23

    申请号：PCT/US2012/025483

    申请日：2012-02-16

    Applicant: SYNOS TECHNOLOGY, INC. ,  LEE, Sang, In

    Inventor： LEE, Sang, In

    IPC: C30B23/00

    CPC classification number: C23C16/45534 ,  B05D1/36 ,  B05D1/38 ,  B05D1/60 ,  B05D1/62 ,  C23C16/345 ,  C23C16/45517 ,  C23C16/45553 ,  C23C16/513

    Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

    Abstract translation: 实施例涉及在不同的沉积过程阶段使用自由基。 可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。 在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或 增加沉积速率。 用于产生自由基的气体可包括惰性气体和其它气体。 基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

    COMBINED INJECTION MODULE FOR SEQUENTIALLY INJECTING SOURCE PRECURSOR AND REACTANT PRECURSOR
    2.
    发明申请
    COMBINED INJECTION MODULE FOR SEQUENTIALLY INJECTING SOURCE PRECURSOR AND REACTANT PRECURSOR 审中-公开
    用于连续注射源前体和反应物前体的组合注射模块

    公开(公告)号：WO2012112373A1

    公开(公告)日：2012-08-23

    申请号：PCT/US2012/024451

    申请日：2012-02-09

    Applicant: SYNOS TECHNOLOGY, INC. ,  LEE, Sang, In

    Inventor： LEE, Sang, In

    IPC: H01L21/31

    CPC classification number: C23C16/45548 ,  C23C16/403 ,  C23C16/4412

    Abstract: Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

    Abstract translation: 使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。 源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。 然后将反应物前体经由与第一通道分离的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分离的第二排气部分排出。 在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

    VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE
    3.
    发明申请
    VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE 审中-公开
    用于在弯曲表面形成薄膜的蒸气沉积反应器

    公开(公告)号：WO2011041255A1

    公开(公告)日：2011-04-07

    申请号：PCT/US2010/050358

    申请日：2010-09-27

    Applicant: SYNOS TECHNOLOGY, INC. ,  LEE, Sang, In

    Inventor： LEE, Sang, In

    IPC: C23C16/455

    CPC classification number: C23C16/045 ,  C23C16/00 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/545

    Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.

    Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括沿圆弧排列的第一至第三部分。 第一部分包括用于将材料注射到第一部分中的凹部中的至少一个第一注射部分。 第二部分与第一部分相邻，并具有与第一部分的凹部通信连接的凹部。 第三部分与第二部分相邻并且具有与第二部分的凹部连通的凹部和用于从气相沉积反应器排出材料的排气部分。

    ELECTRODE STRUCTURE, DEVICE COMPRISING THE SAME AND METHOD FOR FORMING ELECTRODE STRUCTURE
    5.
    发明申请
    ELECTRODE STRUCTURE, DEVICE COMPRISING THE SAME AND METHOD FOR FORMING ELECTRODE STRUCTURE 审中-公开

    公开(公告)号：WO2010085081A3

    公开(公告)日：2010-07-29

    申请号：PCT/KR2010/000360

    申请日：2010-01-20

    Applicant: SYNOS TECHNOLOGY, INC. ,  LEE, Sang In

    Inventor： LEE, Sang In

    IPC: H01L31/042

    Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor cam be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

    VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM
    6.
    发明申请
    VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM 审中-公开
    用于形成薄膜的蒸气沉积反应器

    公开(公告)号：WO2010019007A3

    公开(公告)日：2010-04-15

    申请号：PCT/KR2009004528

    申请日：2009-08-13

    Applicant: SYNOS TECHNOLOGY INC ,  LEE SANG IN

    Inventor： LEE SANG IN

    IPC: H01L21/205

    CPC classification number: C23C16/45551 ,  C23C16/4412

    Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

    Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置成通过基底和反应模块之间的相对运动使基底通过反应模块。 反应模块可以包括用于将第二材料注入到基底的注入单元。 形成薄膜的方法包括将衬底放置在腔室中，在腔室中填充第一材料，相对于腔室中的反应模块移动衬底，以及在衬底通过反应模块时向衬底注入第二材料。

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