公开(公告)号：WO2019067836A1

公开(公告)日：2019-04-04

申请号：PCT/US2018/053304

申请日：2018-09-28

Applicant: VERSUM MATERIALS US, LLC

Inventor： GE, Jhih, Kuei ,  LEE, Yi-Chia ,  LIU, Wen, Dar ,  KUO, Chi-Hsien ,  ADAMCZYK, Andrew, J.

IPC: C09K13/08 ,  C09K13/06 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

Abstract: Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.

公开(公告)号：WO2018085117A1

公开(公告)日：2018-05-11

申请号：PCT/US2017/058577

申请日：2017-10-26

Applicant: VERSUM MATERIALS US, LLC

Inventor： VRTIS, Raymond, Nicholas ,  RIDGEWAY, Robert, Gordon ,  ACHTYL, Jennifer Lynn, Anne ,  ENTLEY, William, Robert ,  SINATORE, Dino ,  THEODOROU, Kathleen, Esther ,  ADAMCZYK, Andrew, J.

IPC: C23C16/40 ,  C23C16/34 ,  C23C16/32 ,  C23C16/30 ,  C23C16/50 ,  C23C16/56 ,  C23C16/448 ,  H01L21/02

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.

Abstract translation: 当用作集成电路中的层间电介质以及用于制造它们的方法时，已经确定低介电材料和包含它们的膜用于改善性能。