公开(公告)号：WO2017172745A1

公开(公告)日：2017-10-05

申请号：PCT/US2017/024509

申请日：2017-03-28

Applicant: SITEC GMBH

Inventor： DASSEL, Mark, W. ,  VANDEVANTER, Michael

IPC: H01L21/67

CPC classification number: C23C16/442 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/4411

Abstract: Mechanically vibrated packed bed reactor systems and processes of crystal production systems and processes that provide large, dense, uniform silicon coated particles having very low levels of contaminants such as metals and oxygen while such systems and processes minimize or eliminate dusting. These silicon coated particles are produced, conveyed, and formed into crystals in an environment maintained at a low oxygen level or a very low oxygen level and a low contaminant level or very low contaminant level to minimize formation of silicon oxides and minimize deposition of contaminants on the coated particles. Such high purity coated silicon particles may not require classification and may be used in whole or in part in the crystal production systems and processes. The crystal production systems and processes and resultant high quality of silicon boules are improved by the reduction or elimination of the silicon oxide layer and contaminants on the coated particles.

Abstract translation: 机械振动填充床反应器系统和晶体生产系统和方法的工艺，其提供具有非常低水平的污染物例如金属和氧的大而致密，均匀的硅涂覆颗粒，同时这样的系统和工艺最小化或 消除灰尘。 这些硅涂覆颗粒在维持在低氧水平或非常低氧水平和低污染水平或非常低污染水平的环境中被生产，传送并形成晶体，以最小化硅氧化物的形成并且使污染物的沉积最小化 涂覆的颗粒。 这种高纯度涂覆的硅颗粒可能不需要分类并且可以全部或部分用于晶体生产系统和工艺中。 通过减少或消除涂覆颗粒上的氧化硅层和污染物来改善晶体生产系统和工艺以及由此产生的高质量硅晶锭。

公开(公告)号：WO2016073014A1

公开(公告)日：2016-05-12

申请号：PCT/US2014/070592

申请日：2014-12-16

Applicant: REC SILICON INC

Inventor： KELLY, Casey, M. ,  LOUSHIN, Bryan, Joseph

IPC: H01L21/205

CPC classification number: C23C16/46 ,  B01J2219/083 ,  B01J2219/0841 ,  B01J2219/0871 ,  B01J2219/0875 ,  C01B33/035 ,  C23C16/24 ,  C23C16/4411 ,  C23C16/4418

Abstract: Polysilicon crystalline rods are formed by chemical vapor deposition in the reaction chamber of a Siemens reactor. Filament holding assemblies secure vertically extending filaments to electrodes located along the floor of the reactor. A filament holding assembly includes a chuck support member that is mounted on an electrode and that has an upwardly tapering side surface. A chuck is seated on the chuck support member with at least a portion of the chuck support member received within a cavity defined in the base of the chuck with the side surface of the chuck support member engaging the surface that defines the cavity. The cavity can sized and shaped such that a gap is defined between the distal end of the chuck support member and an end wall surface of the cavity. The chuck has an upwardly opening receptacle that receives and holds the end portion of an upwardly extending filament.

Abstract translation: 通过化学气相沉积在西门子反应器的反应室中形成多晶硅结晶棒。 长丝保持组件将垂直延伸的细丝固定到位于反应器底部的电极。 灯丝保持组件包括安装在电极上并具有向上倾斜的侧表面的卡盘支撑构件。 卡盘位于卡盘支撑构件上，其中卡盘支撑构件的至少一部分容纳在限定在卡盘的基部中的空腔内，卡盘支撑构件的侧表面接合限定空腔的表面。 空腔可以尺寸和形状使得在卡盘支撑构件的远端和空腔的端壁表面之间限定间隙。 卡盘具有向上开口的容器，其容纳并保持向上延伸的细丝的端部。

公开(公告)号：WO2013141371A1

公开(公告)日：2013-09-26

申请号：PCT/JP2013/058322

申请日：2013-03-22

Applicant: 株式会社日立国際電気

Inventor： 村田　等 ,  上野　正昭 ,  小杉　哲也 ,  杉下　雅士

IPC: H01L21/31 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/4411 ,  C23C16/45593 ,  C23C16/46 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28506

Abstract: 縦型の反応管１２と、断熱材から形成され、反応管１２が収容される反応管収容室１６を内側に有する断熱壁１８と、断熱壁１８における反応管収容室１６の内壁に設けられたヒータ２０と、断熱壁１８における側壁の内部に上下方向に設けられた空気流通流路２２と、空気流通流路に上方向または下方向に空気を流通させるブロワ３０と、空気流通流路２２を外気と連通させる吸気弁２４、４２と、空気流通流路２２を設備排気系と連通させる排気弁４０、４４と、を備え、昇温工程と降温工程とで吸気弁２４、４２と排気弁４０、４４を切り換える基板処理装置である。

Abstract translation: 提供了一种基板处理装置，包括：垂直反应管（12）; 绝缘壁（18），其由绝缘材料形成，在其内部还包括反应管容纳室（16），其中容纳所述反应管（12）; 设置在绝热壁（18）内的反应管容纳室（16）的内壁上的加热器（20）。 空气循环流路（22），其垂直设置在所述绝缘壁（18）中的所述侧壁的内部; 鼓风机（30），其在空气循环流路中向上或向下循环空气; 将空气循环流路（22）连接到外部大气的进气阀（24,42） 以及将空气循环流动路径（22）连接到基础设施排气组件的排气阀（40,44）。 进气门（24,42）和排气门（40,44）通过升温步骤和降温步骤进行切换。

公开(公告)号：WO2011044451A2

公开(公告)日：2011-04-14

申请号：PCT/US2010/051961

申请日：2010-10-08

Applicant: APPLIED MATERIALS, INC. ,  SONG, Eddy ,  ISHIKAWA, Tetsuya

Inventor： SONG, Eddy ,  ISHIKAWA, Tetsuya

IPC: H01L21/205

CPC classification number: H01L21/67115 ,  B05B1/18 ,  C23C16/4411 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45576 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.

Abstract translation: 提供了用于化学气相沉积和/或氢化物气相外延沉积的方法和设备。 该设备通常包括限定第一充气室的下底板和上底板。 上底板和位于上底板上方的中板限定了热交换通道。 位于中间板上方的中板和顶板限定第二充气室。 多个气体管道从第二充气室延伸穿过热交换通道和第一充气室。 该方法通常包括使第一气体流过第一气室进入处理区域，以及使第二气体流过第二气室进入处理区域。 热交换流体被引入设置在第一充气室和第二充气室之间的热交换通道。 第一种气体和第二种气体然后反应以在基底上形成膜。

公开(公告)号：WO2011043566A2

公开(公告)日：2011-04-14

申请号：PCT/KR2010/006749

申请日：2010-10-04

Applicant: SNU PRECISION CO., LTD ,  BAK, Byeong-Min ,  GONG, Doo Won ,  SON, Sung Kwan ,  CHO, Whang Sin ,  JUNG, Sung Jae ,  PAHK, Heui Jae

Inventor： BAK, Byeong-Min ,  GONG, Doo Won ,  SON, Sung Kwan ,  CHO, Whang Sin ,  JUNG, Sung Jae ,  PAHK, Heui Jae

IPC: H01L21/20 ,  H01L31/042

CPC classification number: H01L21/6776 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45563 ,  C23C16/4557 ,  C23C16/54 ,  H01L21/6715

Abstract: There is provided a substrate processing apparatus and method capable of preventing the substrate from being heated and efficiently collecting residual deposition material. The substrate processing apparatus includes a chamber unit including an inner space divided into an introduction section, a film formation section, and a discharge section, at least one material injection nozzle unit disposed in the film formation section of the chamber unit to inject a deposition material to a substrate being transferred, and a cooling plate unit disposed to surround the film formation section of the chamber unit and adapted to cool inside of the film formation section. In addition, the substrate processing apparatus further includes at least one cold trap unit disposed at a lower part of the material injection nozzle unit to collect residual deposition material not deposited on the substrate but left from the whole deposition material injected from the material injection nozzle unit.

Abstract translation: 提供了能够防止衬底被加热并有效地收集残留沉积材料的衬底处理设备和方法。 该基板处理装置包括：腔室单元，其包括被分成引入部分，成膜部分和排出部分的内部空间;至少一个材料注入喷嘴单元，其设置在腔室单元的成膜部分中以注入沉积材料 与被转印的基板连接的冷却板单元，以及包围该腔室单元的成膜部并适于冷却成膜部的内部的冷却板单元。 另外，所述基板处理装置还包括至少一个冷阱单元，所述冷阱单元设置在所述材料注入喷嘴单元的下部，以收集未沉积在所述基板上但是残留在从所述材料注入喷嘴单元注入的整个沉积材料上的残余沉积材料

公开(公告)号：WO2010107842A3

公开(公告)日：2011-01-13

申请号：PCT/US2010027545

申请日：2010-03-16

Applicant: ALTA DEVICES INC ,  HE GANG ,  HIGASHI GREGG ,  SORABJI KHURSHED ,  HAMAMJY ROGER ,  HEGEDUS ANDREAS

Inventor： HE GANG ,  HIGASHI GREGG ,  SORABJI KHURSHED ,  HAMAMJY ROGER ,  HEGEDUS ANDREAS

IPC: H01L21/205 ,  H01L31/18 ,  H05H1/34

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。 淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板 并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。 每个管连接到上管和下管板的各个孔中并与其流体连通。

公开(公告)号：WO2010107835A3

公开(公告)日：2011-01-13

申请号：PCT/US2010027538

申请日：2010-03-16

Applicant: ALTA DEVICES INC ,  HE GANG ,  HIGASHI GREGG ,  SORABJI KHURSHED ,  HAMAMJY ROGER ,  HEGEDUS ANDREAS

Inventor： HE GANG ,  HIGASHI GREGG ,  SORABJI KHURSHED ,  HAMAMJY ROGER ,  HEGEDUS ANDREAS

IPC: H01L21/205 ,  H05H1/34

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。 在一个实施方案中，CVD反应器具有反应器盖组件，反应器盖组件设置在反应器主体上，并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件，隔离器组件，第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板，其中第一喷头组件设置在第一面板和隔离器组件之间，排气组件设置在第二喷头组件和第二面板之间。 反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件，并且容纳可用于加热设置在晶片载体上的晶片的多个灯。

公开(公告)号：WO2010107835A2

公开(公告)日：2010-09-23

申请号：PCT/US2010/027538

申请日：2010-03-16

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

IPC: H01L21/205 ,  H05H1/34

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。 在一个实施方案中，CVD反应器具有反应器盖组件，反应器盖组件设置在反应器主体上，并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件，隔离器组件，第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板，其中第一喷头组件设置在第一面板和隔离器组件之间，排气组件设置在第二喷头组件和第二面板之间。 反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件，并且包含可用于加热设置在晶片载体上的晶片的多个灯。

公开(公告)号：WO2007021692A3

公开(公告)日：2009-05-22

申请号：PCT/US2006030913

申请日：2006-08-08

Applicant: APPLIED MATERIALS INC ,  CARLSON DAVID K ,  LAM ANDREW ,  HEMKAR MANISH ,  SANCHEZ ERROL ,  KUPPURAO SATHEESH ,  BECKFORD HOWARD

Inventor： CARLSON DAVID K ,  LAM ANDREW ,  HEMKAR MANISH ,  SANCHEZ ERROL ,  KUPPURAO SATHEESH ,  BECKFORD HOWARD

IPC: C23C16/00

CPC classification number: C23C16/46 ,  C23C16/4411 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Abstract translation: 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法，系统和装置。 腔表面的多于一个部分可以进行温度调制。

公开(公告)号：WO2007021692A2

公开(公告)日：2007-02-22

申请号：PCT/US2006/030913

申请日：2006-08-08

Applicant: APPLIED MATERIALS, INC. ,  CARLSON, David, K. ,  LAM, Andrew ,  HEMKAR, Manish ,  SANCHEZ, Errol ,  KUPPURAO, Satheesh ,  BECKFORD, Howard

Inventor： CARLSON, David, K. ,  LAM, Andrew ,  HEMKAR, Manish ,  SANCHEZ, Errol ,  KUPPURAO, Satheesh ,  BECKFORD, Howard

IPC: C23C16/00

CPC classification number: C23C16/46 ,  C23C16/4411 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.

Abstract translation: 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法，系统和装置。 腔表面的多于一个部分可以进行温度调制。