公开(公告)号：WO2013076709A1

公开(公告)日：2013-05-30

申请号：PCT/IB2012/056745

申请日：2012-11-26

Applicant: SELEX SISTEMI INTEGRATI S.P.A.

Inventor： ULISSE, Giacomo ,  BRUNETTI, Francesca ,  DI CARLO, Aldo ,  RICCI, Ferdinando ,  GEMMA, Filippo ,  FIORELLO, Anna Maria ,  DISPENZA, Massimiliano ,  BUTTIGLIONE, Roberta

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J21/20 ,  H01J19/24 ,  H01J19/38 ,  H01J29/04

CPC classification number: H01J19/24 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J19/32 ,  H01J19/38 ,  H01J19/46 ,  H01J21/105 ,  H01J21/20

Abstract: The invention concerns a device (11, 21) comprising: a cathode (14) that lies on a cathode plane and includes, in an active region (11a), one or more cathode straight -finger-shaped terminals (14b) with a main extension direction parallel to a first reference direction (2); for each cathode terminal (14b), one or more electron emitters (14c) formed on, and in ohmic contact with, said cathode terminal (14b); and a gate electrode (15) that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode (14) and includes, in the active region (lla), two or more gate straight-finger-shaped terminals (15b) with a main extension direction parallel to the first reference direction (z); wherein the gate terminals (15b) are interlaced with said cathode terminal (s) (14b).

Abstract translation: 本发明涉及一种装置（11,21），包括：阴极（14），其位于阴极平面上并且在有源区域（11a）中包括一个或多个具有主体的阴极直指针形端子（14b） 延伸方向平行于第一参考方向（2）; 对于每个阴极端子（14b），一个或多个电子发射器（14c）与所述阴极端子（14b）形成并以欧姆接触形成; 以及位于与所述阴极平面平行且间隔开的栅极平面上的栅极电极（15）不与阴极（14）重叠，并且在有源区域（11a）中包括两个或更多个栅极直线 - 主延伸方向平行于第一参考方向（z）的指状端子（15b）; 其中所述栅极端子（15b）与所述阴极端子（14b）交错。

公开(公告)号：WO2004012218A1

公开(公告)日：2004-02-05

申请号：PCT/KR2003/001526

申请日：2003-07-30

Applicant: POSTECH FOUNDATION ,  LEE, Kun-Hong ,  HWANG, Sun-Kyu ,  JEONG, Soo-Hwan

Inventor： LEE, Kun-Hong ,  HWANG, Sun-Kyu ,  JEONG, Soo-Hwan

IPC: H01J1/30

CPC classification number: H01J21/105 ,  H01J9/025

Abstract: An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage for the device.

Abstract translation: 通过使用阳极氧化工艺制造具有三极管结构的电场发射器件。 该器件包括支撑衬底，用作器件的阴极电极的底部电极层，具有多个第一子微孔的栅极绝缘层，具有多个第二子微孔的栅极电极层 对于第一子微孔，具有连接到第二子微孔的多个第三子微孔的阳极绝缘层，用于气密密封器件的顶电极层，顶电极层用作阳极的阳极 所述装置和形成在所述第一子微孔中的多个发射器。 发射体形成为尽可能接近器件的电极，导致器件的驱动电压降低。

公开(公告)号：WO1999020810A1

公开(公告)日：1999-04-29

申请号：PCT/US1998022428

申请日：1998-10-22

Applicant: BOREALIS TECHNICAL LIMITED

Inventor： BOREALIS TECHNICAL LIMITED ,  EDELSON, Jonathan, Sidney ,  COX, Isaiah, Watas

IPC: C23C16/00

CPC classification number: F25B21/00 ,  C23C14/12 ,  F25B2321/003 ,  F25B2400/15 ,  H01J1/02 ,  H01J1/13 ,  H01J1/14 ,  H01J1/30 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  H01J2201/30426 ,  Y02B30/66

Abstract: Methods for making low work-functions electrodes either made from or coated with an electride material (2) in which the electride material has lattice defect sites are described. Lattice defect sites are regions of the crystal structure where irregularities and deformations occur. Also provided are methods for making electrodes which consist of a substrate (1) coated with a layer of a compound comprised of a cation complexed by an electride former (2), in which said complex has lattice defect sites. In addition, methods for making electrodes which consist of a bulk metal coated with a layer of an electride former having lattice defect sites are described. The electride former stabilizes the loss of electrons by surface sites on the metal, lowering the work-function of the coated surface.

Abstract translation: 描述了由电化学材料具有晶格缺陷位点的电化学材料（2）制成或涂覆低功函电极的方法。 晶格缺陷位点是发生不规则和变形的晶体结构区域。 还提供了制造电极的方法，该电极由涂覆有由电化学成形剂（2）络合的阳离子组成的化合物层的基底（1）组成，其中所述络合物具有晶格缺陷位点。 此外，描述了制造电极的方法，其由涂覆有具有晶格缺陷位点的电化学成形剂层的体金属组成。 电子前体通过金属上的表面位点稳定电子的损失，降低涂覆表面的功能。

公开(公告)号：WO1996036061A1

公开(公告)日：1996-11-14

申请号：PCT/US1996006336

申请日：1996-05-06

Applicant: ADVANCED VISION TECHNOLOGIES, INC. ,  POTTER, Michael, D.

Inventor： ADVANCED VISION TECHNOLOGIES, INC.

IPC: H01J01/16

CPC classification number: H01J21/105 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127

Abstract: A lateral-emitter field-emission device includes a thin-film emitter cathode (50) of thickness less than several hundred angstrom and has an edge or tip (110) with small radius of curvature. In the display cell structure, a cathodoluminescent phosphor anode (60), allowing a large portion of the phosphor anode's top surface to emit light in a desired direction. An anode contact layer contacts the phosphor anode (60) from below to form a buried anode contact (90) which does not interfere with light emission. The anode phosphor is precisely spaced apart form the cathode edge or tip and receives electrons emitted by the field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as diode, triode, or tetrode, etc. having one or more control electrodes (140) and/or (170) positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode.

Abstract translation: 横向射极场致发射器件包括厚度小于几百埃的薄膜发射极阴极（50），并且具有小的曲率半径的边缘（110）。 在显示单元结构中，阴极发光磷光体阳极（60）允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触磷光体阳极（60）以形成不干扰光发射的掩埋阳极接触（90）。 当施加小的偏置电压时，阳极磷光体从阴极边缘或尖端精确地间隔开，并且接收由侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极（140）和/或（170）的二极管，三极管或四极管等，以允许通过施加到发光体的电信号来控制从发射极到磷光体阳极的电流 控制电极。

公开(公告)号：WO2013076709A8

公开(公告)日：2013-08-15

申请号：PCT/IB2012056745

申请日：2012-11-26

Applicant: SELEX SISTEMI INTEGRATI SPA

Inventor： ULISSE GIACOMO ,  BRUNETTI FRANCESCA ,  DI CARLO ALDO ,  RICCI FERDINANDO ,  GEMMA FILIPPO ,  FIORELLO ANNA MARIA ,  DISPENZA MASSIMILIANO ,  BUTTIGLIONE ROBERTA

IPC: H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01J21/10 ,  H01J21/20 ,  H01J29/04

CPC classification number: H01J19/24 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J19/32 ,  H01J19/38 ,  H01J19/46 ,  H01J21/105 ,  H01J21/20

Abstract: The invention concerns a device (11, 21) comprising: a cathode (14) that lies on a cathode plane and includes, in an active region (11a), one or more cathode straight -finger-shaped terminals (14b) with a main extension direction parallel to a first reference direction (z); for each cathode terminal (14b), one or more electron emitters (14c) formed on, and in ohmic contact with, said cathode terminal (14b); and a gate electrode (15) that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode (14) and includes, in the active region (lla), two or more gate straight-finger-shaped terminals (15b) with a main extension direction parallel to the first reference direction (z); wherein the gate terminals (15b) are interlaced with said cathode terminal (s) (14b).

Abstract translation: 本发明涉及一种装置（11,21），包括：阴极（14），其位于阴极平面上并且在有源区域（11a）中包括一个或多个具有主体的阴极直指针形端子（14b） 延伸方向平行于第一参考方向（z）; 对于每个阴极端子（14b），一个或多个电子发射器（14c）与所述阴极端子（14b）形成并以欧姆接触形成; 以及位于与所述阴极平面平行且间隔开的栅极平面上的栅极电极（15）不与阴极（14）重叠，并且在有源区域（11a）中包括两个或更多个栅极直线 - 主延伸方向平行于第一参考方向（z）的指状端子（15b）; 其中所述栅极端子（15b）与所述阴极端子（14b）交错。

公开(公告)号：WO2013101948A1

公开(公告)日：2013-07-04

申请号：PCT/US2012/071845

申请日：2012-12-27

Applicant: ELWHA LLC ,  CHEATHAM, Jesse R., III ,  ECKHOFF, Philip Andrew ,  GATES, William ,  HYDE, Roderick A. ,  ISHIKAWA, Muriel Y. ,  KARE, Jordin T. ,  MYHRVOLD, Nathan P. ,  PAN, Tony S. ,  PETROSKI, Robert C. ,  TEGREENE, Clarence T. ,  TUCKERMAN, David B. ,  WHITMER, Charles ,  WOOD, JR., Lowell L. ,  WOOD, Victoria Y.H.

Inventor： CHEATHAM, Jesse R., III ,  ECKHOFF, Philip Andrew ,  GATES, William ,  HYDE, Roderick A. ,  ISHIKAWA, Muriel Y. ,  KARE, Jordin T. ,  MYHRVOLD, Nathan P. ,  PAN, Tony S. ,  PETROSKI, Robert C. ,  TEGREENE, Clarence T. ,  TUCKERMAN, David B. ,  WHITMER, Charles ,  WOOD, JR., Lowell L. ,  WOOD, Victoria Y.H.

IPC: H01J1/02

CPC classification number: H01J45/00 ,  B82Y30/00 ,  H01J1/48 ,  H01J3/022 ,  H01J19/38 ,  H01J21/105 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged in different ways according to a particular embodiment. Different embodiments of the heat engine may also incorporate different materials in and/or proximate to the cathode, gate, suppressor, and anode.

Abstract translation: 场发射装置被配置为热发动机。 热引擎的不同实施例可以具有不同的构造，其可以包括根据特定实施例以不同方式布置的阴极，栅极，抑制器和阳极。 热引擎的不同实施例也可以将不同的材料并入阴极，栅极，抑制器和阳极中和/或接近阴极，栅极，抑制器和阳极。

公开(公告)号：WO01008192A1

公开(公告)日：2001-02-01

申请号：PCT/US2000/020144

申请日：2000-07-24

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J31/12

CPC classification number: H01J21/105 ,  H01J9/025

Abstract: A lateral-emitter field emission device has a gate (30) that is separated by an insulating layer (40) from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to a microchamber (110). The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, the gate current component of the emitter current consists of displacement current only, and direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchamber, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a gate electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices, including formation in situ of a vacuum microchamber.

Abstract translation: 侧向发射场场发射装置具有由绝缘层（40）与包含该装置的其它元件的真空或充满气体的环境隔开的栅极（30）。 例如，栅极可以设置在微室外（110）的外部。 绝缘层被设置成使得从侧向发射器发射的电子没有真空或气体填充到栅极的路径。 设置在发射极和栅极之间的绝缘层优选地包括具有大于1的介电常数的材料。 绝缘层还优选在器件的电子能量的操作范围内具有低的二次电子产率。 对于显示应用，绝缘层优选是透明的。 发射电子被限制在含有发射极的微室中。 因此，发射极电流的栅极电流分量仅由位移电流组成，并且防止了从发射极到栅极的直接电子电流。 器件的阵列包括微阵列阵列，使得即使对于没有栅电极的二极管器件，来自每个发射极的电子电流也可以到达同一微室中的阳极。 制造工艺特别适用于制造这种装置的装置和阵列，包括真空微室的原位形成。

公开(公告)号：WO00055880A1

公开(公告)日：2000-09-21

申请号：PCT/JP2000/001620

申请日：2000-03-16

IPC: H01J3/02 ,  H01J21/10 ,  H01J31/12 ,  H01J1/304 ,  H01J29/04

CPC classification number: H01J21/105 ,  H01J3/022 ,  H01J31/127

Abstract: A field-emission device is designed for finely controlled reliable electron emission from a cathode with decreased voltage applied to a grid. An electric field formed between a grid (3) and an anode and extending through an opening in the grid (3) toward the cathode (2) interacts with an electric field existing between the cathode (2) and the grid (3) to produce a compound electric field. The device comprises electron emission control means for varying the potential at any of the cathode (2), the anode and the grid (3) electrode to control the intensity of the compound electric field.

Abstract translation: 场致发射器件设计用于从施加到电网的电压降低的阴极进行精细控制的可靠的电子发射。 在栅极（3）和阳极之间形成并且延伸通过网格（3）中的开口朝向阴极（2）的电场与存在于阴极（2）和栅极（3）之间的电场相互作用，以产生 复合电场。 该装置包括用于改变任何阴极（2），阳极和栅格（3）电极处的电位的电子发射控制装置，以控制复合电场的强度。

公开(公告)号：WO1992015111A1

公开(公告)日：1992-09-03

申请号：PCT/US1991001220

申请日：1991-02-22

Applicant: HICKSTECH CORP.

Inventor： HICKSTECH CORP. ,  HICKS, John, Wilbur, Jr.

IPC: H01J01/30

CPC classification number: H01J21/105

Abstract: A novel vacuum tube type of electric apparatus preferably utilizes cold cathode emission to provide an electron source. A grid element (24) is employed to vary path direction for the particles, which are directed to alternative positions of an anode element (16). Secondary electron emission from a portion of the anode (36) is utilized to permit the anode potential to rise upon electron impingement, while a second portion of the anode (34) retains electrons to drive the anode potential in the negative sense. The structure allows both positive and negative states to be maintained, and has value in both rapid switching and memory application. The tube is advantageously manufactured on an insulating substrate which may be drawn to microscopic dimensions. This permits a dense pack to be accomplished, with low power requirements and high operating speed.

Abstract translation: 一种新颖的真空管式电气设备优选地利用冷阴极发射来提供电子源。 栅极元件（24）用于改变颗粒的路径方向，颗粒指向阳极元件（16）的替代位置。 来自阳极（36）的一部分的二次电子发射被用于允许阳极电位在电子冲击时上升，而阳极（34）的第二部分保持电子以驱动负极性的阳极电位。 该结构允许维持正和负状态，并且在快速切换和存储器应用中都具有价值。 该管有利地制造在可以被拉伸至微观尺寸的绝缘基底上。 这允许在低功率要求和高操作速度下实现密集的包装。

公开(公告)号：WO2013101944A3

公开(公告)日：2015-06-11

申请号：PCT/US2012071841

申请日：2012-12-27

Applicant: ELWHA LLC ,  HYDE RODERICK A ,  KARE JORDIN T ,  MYHRVOLD NATHAN P ,  PAN TONY S ,  WOOD JR LOWELL L

Inventor： HYDE RODERICK A ,  KARE JORDIN T ,  MYHRVOLD NATHAN P ,  PAN TONY S ,  WOOD JR LOWELL L

IPC: H01L23/34

CPC classification number: H01J45/00 ,  B82Y30/00 ,  H01J1/48 ,  H01J3/022 ,  H01J19/38 ,  H01J21/105 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A field emission device is configured as a heat engine, and the performance of the device is optimized.

Abstract translation: 场致发射器件被配置为热引擎，并优化器件的性能。