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公开(公告)号:WO2017084811A1
公开(公告)日:2017-05-26
申请号:PCT/EP2016/074575
申请日:2016-10-13
申请人: ARCAM AB
发明人: FAGER, Mattias
IPC分类号: H01J37/075 , H01J37/07 , B22F3/105 , B29C67/00
CPC分类号: B22F3/1055 , B22F3/1017 , B22F2003/1056 , B22F2003/1057 , B22F2998/10 , B22F2999/00 , B23K15/0086 , B23K15/02 , B29C64/153 , B29C64/393 , B33Y10/00 , B33Y30/00 , B33Y50/02 , H01J29/46 , H01J37/07 , H01J37/242 , H01J37/3178 , H01J2237/06308 , H01J2237/065 , Y02P10/295 , H01J37/00 , B22F2203/00
摘要: The present invention relates to a method of forming a three- dimensional article through successively depositing individual layers of powder material that are fused together so as to form the article, comprising a method of operating a triode electron beam source including a cathode (102), a grid (104) and an anode (106) with the following steps: (a) setting an electron beam current, a cathode heating power, a grid potential Ug and a cathode potential Uc to predetermined start values; (b) reducing the cathode heating power and decreasing a Ug - Uc potential difference for mainintainig a predetermined electron beam current; (c) detecting an X-ray signal emanating from the electron beam source with at least one X-ray detector (190); (d) repeating said reducing and detecting steps until the detected X- ray signal is above a predetermined value; and (e) increasing the cathode heating power by a predetermined safety value above the heating power value which resulted in X-ray signals above said predetermined value. Thereby, the lowest acceptable cathode heating power without affacting the electron beam current is determined and thus the lifetime of the cathode element is prolonged.
摘要翻译: 本发明涉及一种通过连续沉积熔合在一起以形成制品的单独的粉末材料层来形成三维制品的方法,该方法包括操作三极电子束 其包括阴极(102),栅极(104)和阳极(106),其具有以下步骤:(a)将电子束电流,阴极加热功率,栅极电势Ug和阴极电势Uc设置为预定的开始 值; (b)降低阴极加热功率并降低用于保持预定电子束电流的Ug-Uc电位差; (c)用至少一个X射线检测器(190)检测从电子束源发出的X射线信号; (d)重复所述减少和检测步骤,直到检测到的X射线信号高于预定值; 和(e)将阴极加热功率增加高于导致X射线信号高于所述预定值的加热功率值的预定安全值。 因此,确定了最低可接受的阴极加热功率而不影响电子束电流,从而延长了阴极元件的寿命。 p>
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公开(公告)号:WO2014009028A1
公开(公告)日:2014-01-16
申请号:PCT/EP2013/055039
申请日:2013-03-12
IPC分类号: C03C23/00 , H01J37/06 , H01J37/147 , H01J37/15 , H01J37/305
CPC分类号: H01J29/70 , H01J3/30 , H01J29/04 , H01J29/48 , H01J31/00 , H01J37/06 , H01J37/147 , H01J37/15 , H01J37/305 , H01J2237/0213 , H01J2237/061 , H01J2237/06308
摘要: Vorrichtung (20) zur Erzeugung eines Elektronenstrahls (4), umfassend eine Glühkathode (1), eine Kathodenelektrode (2), eine Anodenelektrode (3) mit einer Öffnung (6), durch die ein von der Vorrichtung erzeugter Elektronenstrahl (4) hindurchtreten kann, wobei im Betrieb der Vorrichtung (20) zwischen der Kathodenelektrode (2) und der Anodenelektrode (3) eine Spannung zur Beschleunigung der aus der Glühkathode (1) austretenden Elektronen anliegt, sowie Ablenkmittel, die den durch die Öffnung der Anodenelektrode (3) hindurch getretenen Elektronenstrahl (4) ablenken können, wobei die Ablenkmittel eine mindestens Ablenkelektrode (8, 12) umfassen, an der der Elektronenstrahl (4) reflektiert werden kann und/oder die eine zu der Ausbreitungsrichtung des Elektronenstrahls (4) geneigte Ablenkfläche (9) aufweist.
摘要翻译: 可以用于产生电子束(4),其包括热离子阴极传递装置(20)(1),阴极电极(2),阳极电极(3)具有开口(6),通过它由所述装置的电子束所产生的电流(4) 其中,所述阴极电极(2)和阳极电极之间的装置(20)的操作期间(3)是用于从热阴极加速施加的电压(1)的电子发射,通过阳极电极(3)穿过的孔,以及偏转装置相对应的 可以分散进入电子束(4),其中,所述偏转装置至少在所述电子束(4)可以被反射偏转电极(8,12)和/或所述一个到电子束的传播方向(4)具有一个倾斜的偏转表面(9) ,
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公开(公告)号:WO02045123A1
公开(公告)日:2002-06-06
申请号:PCT/JP2001/010020
申请日:2001-11-16
IPC分类号: G03F7/20 , H01J37/065 , H01J37/305 , H01L21/027
CPC分类号: H01J37/065 , H01J2237/06308 , H01J2237/3175
摘要: An electron beam generating device, wherein a high-resistance film is formed on the outer surface of an insulator provided with a cathode for emitting thermions and a grid for collecting thermions and forming an electron beam to allow a feeble current to flow to the high-resistance film, thereby preventing the accumulation of thermions on the insulator and discharging. The upper portion of the high-resistance film connected with a chamber gives an approximate reference potential to the upper portion of the film, and the lower portion of the high-resistance film connected with the grid gives almost the same potential as that of the grid to the lower portion of the film to allow a feeble current to flow to the film. The prevention of accumulation of thermions on the insulator can prevent discharging, accurately control the current capacity of an electron beam, and give the electron beam generating device a longer service life.
摘要翻译: 一种电子束产生装置,其中在设置有用于发射热量的阴极的绝缘体的外表面上形成高电阻膜,并且形成用于收集热量的栅格和形成电子束以允许微弱电流流向高电阻, 从而防止绝缘体上的热量积聚和放电。 与室连接的高电阻膜的上部为膜的上部提供近似的参考电位,并且与电网连接的高电阻膜的下部几乎具有与电网相同的电位 到薄膜的下部以允许微弱的电流流向胶片。 防止绝缘体上的热量累积可以防止放电,精确控制电子束的电流容量,并使电子束产生装置的使用寿命更长。
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公开(公告)号:WO2007105389A1
公开(公告)日:2007-09-20
申请号:PCT/JP2007/052201
申请日:2007-02-08
申请人: 浜松ホトニクス株式会社 , 松村 達也
发明人: 松村 達也
IPC分类号: H01J3/02 , H01J35/06 , G21K5/04 , H01J37/065 , H01J37/248 , H05G1/00
CPC分类号: H01J3/027 , H01J33/00 , H01J33/04 , H01J2235/087 , H01J2237/061 , H01J2237/06308 , H01J2237/164
摘要: An energy ray generating device (1a) comprises an electron gun (2), a vacuum vessel (3), and an outgoing window forming part (10a or 10b). The electron gun (2) comprises a resin member (4), a case (5), a connector (6), a filament (7), and internal wires (9a, 9b). The case (5) comprises inner surfaces (5a, 5b) facing each other in the Z-axis direction and inner surfaces (5c, 5d) facing each other in the X-axis direction and an opening (5g) passing from the inner surface (5a) to the outer surface. The resin member (4) is disposed in contact with the inner surfaces (5a, 5c) of the case (5) and apart from the other inner surfaces (5b, 5d to 5f). The resin member (4) comprises a projecting part (4b) projecting from the opening (5g). The filament (7) is fitted to the end of the projecting part (4b). The connector (6) is disposed on the inner surface (5c). Consequently, the effect of the expansion of the resin member (4) due to heating with a high voltage can be effectively suppressed.
摘要翻译: 能量射线产生装置(1a)包括电子枪(2),真空容器(3)和出射窗形成部分(10a或10b)。 电子枪(2)包括树脂构件(4),壳体(5),连接器(6),细丝(7)和内部导线(9a,9b)。 壳体(5)包括在Z轴方向上彼此相对的内表面(5a,5b)和在X轴方向上彼此相对的内表面(5c,5d)和从内表面 (5a)到外表面。 树脂构件(4)与壳体(5)的内表面(5a,5c)和其他内表面(5b,5d至5f)分开设置。 树脂构件(4)包括从开口(5g)突出的突出部分(4b)。 灯丝(7)装配到突出部分(4b)的端部。 连接器(6)设置在内表面(5c)上。 因此,可以有效地抑制由于高压加热引起的树脂构件(4)膨胀的影响。
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公开(公告)号:WO2007102298A1
公开(公告)日:2007-09-13
申请号:PCT/JP2007/052576
申请日:2007-02-14
发明人: 和田 泰光
IPC分类号: G11B7/26 , G03F7/20 , H01J37/305 , H01L21/027
CPC分类号: H01J37/3174 , B82Y10/00 , B82Y40/00 , G11B7/261 , H01J37/065 , H01J2237/06308 , H01J2237/31793
摘要: 【課題】電磁誘導を介したトランス機構により、固定側から回転側に非接触で電力を供給することで、耐久性を向上する。 【解決手段】ターンテーブル内に設けられ回転軸とともに回転するクランプ電極に対し、筐体側からクランプ電圧をロータリトランスを介して供給し、クランプ電極の静電力によってターンテーブルに載置された基板を把持する。このように、電磁誘導を介したトランス機構により給電することで、非接触で電力を供給することができ、摩耗を招くことがなく耐久性を向上することができる。
摘要翻译: [问题]为了通过从固定侧向旋转侧以非接触的方式供电,通过电磁感应使用变压器机构来提高耐久性。 解决问题的手段将设置在转盘中并与主轴一起旋转的夹紧电极通过旋转变压器从壳体侧供给钳位电压,并且放置在转盘上的基板被静电夹持 钳形电极。 因此,通过电磁感应,通过变压器机构的供电,不产生磨损,耐久性提高,能够以非接触的方式供给动力。
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公开(公告)号:WO2006135094A1
公开(公告)日:2006-12-21
申请号:PCT/JP2006/312263
申请日:2006-06-19
申请人: 住友電気工業株式会社 , 山本 喜之 , 植田 暁彦 , 西林 良樹 , 今井 貴浩
IPC分类号: H01J1/15 , H01J37/06 , H01J37/305
CPC分类号: H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要: It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2 × 10 15 cm -3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 µm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.
摘要翻译: 可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极,具有高亮度和窄能量宽度的电子发射源。 金刚石电子放电阴极至少在其一部分具有单晶金刚石。 金刚石电子发射阴极具有包括锐化部分和加热部分的柱状。 锐化部分具有电子发射部分。 电子发射部分和加热部分由金刚石半导体形成,该金刚石半导体由含有2×10 15 cm -3的p型杂质的p型半导体形成 或以上。 电子发射部分具有半导体。 在电子发射阴极的表面上形成金属层。 金属层至少存在于加热部的一部分。 从电子发射部到最接近金属层末端的位置的距离为500μm。 一对电流引入端子向加热部分供电以加热加热部分。 引入的电子的一部分从电子发射部分发射。
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公开(公告)号:WO2004040614A2
公开(公告)日:2004-05-13
申请号:PCT/NL2003/000745
申请日:2003-10-30
申请人: MAPPER LITHOGRAPHY IP B.V. , WIELAND, Marco, Jan-Jaco , KAMPHERBEEK, Bert, Jan , VAN VEEN, Alexander, Hendrik, Vincent , KRUIT, Pieter
发明人: WIELAND, Marco, Jan-Jaco , KAMPHERBEEK, Bert, Jan , VAN VEEN, Alexander, Hendrik, Vincent , KRUIT, Pieter
IPC分类号: H01J37/302
CPC分类号: H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target (14), comprising: a beamlet generator for generating a plurality of electron beamlets (5a, 5b); a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses (7) wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译: 本发明涉及一种用于将图案转印到目标(14)的表面上的电子束曝光装置,包括:用于产生多个电子束(5a,5b)的小波发生器; 用于接收所述多个电子子束的调制阵列,包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器,可操作地连接到每个调制器的调节器,用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统,包括静电透镜阵列(7),其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦到小于300nm的横截面,以及用于保持目标的靶保持器 在聚焦电子光学系统的第一焦平面中将图案转印到其上的曝光表面。
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公开(公告)号:WO2009151533A3
公开(公告)日:2010-04-08
申请号:PCT/US2009003116
申请日:2009-05-20
IPC分类号: H01J37/06
CPC分类号: H01J37/063 , H01J2237/06308 , H01J2237/06375
摘要: An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.
摘要翻译: 电子束发射器包括用于产生电子的电子发生器。 电子发生器可以具有包含至少一个用于产生电子的电子源的外壳。 该至少一个电子源具有宽度。 电子发生器壳体可以具有与至少一个电子源隔开的电子可渗透区域,以允许从电子发生器壳体中提取电子。 电子可渗透区域可以包括一系列狭长的狭槽和肋,其形成在电子发生器外壳中并横向延伸超过至少一个电子源的宽度。 电子透射区域可以相对于至少一个电子源配置和定位,用于横向扩展由至少一个电子源产生的电子。
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公开(公告)号:WO2009151533A8
公开(公告)日:2010-02-18
申请号:PCT/US2009003116
申请日:2009-05-20
CPC分类号: H01J37/063 , H01J2237/06308 , H01J2237/06375
摘要: An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.
摘要翻译: 电子束发射器包括用于产生电子的电子发生器。 电子发生器可以具有包含至少一个用于产生电子的电子源的壳体。 至少一个电子源具有宽度。 电子发生器壳体可以具有与至少一个电子源间隔开的电子透过区域,用于从电子发生器壳体提取电子。 电子透射区域可以包括形成在电子发生器壳体中并且横向延伸超过至少一个电子源的宽度的一系列窄的细长槽和肋。 电子可渗透区域可以相对于至少一个电子源被配置和定位,以横向扩展由至少一个电子源产生的电子。
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公开(公告)号:WO2006135093A1
公开(公告)日:2006-12-21
申请号:PCT/JP2006/312262
申请日:2006-06-19
申请人: 住友電気工業株式会社 , 植田 暁彦 , 山本 喜之 , 西林 良樹 , 今井 貴浩
IPC分类号: H01J1/15 , H01J37/06 , H01J37/305
CPC分类号: H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要: It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode includes a sharpened section and a heating section. The diamond electron emission cathode has a columnar shape having the sharpened section having an electron emission section and is formed by at least two types of semiconductor having different electric characteristics. One of the types constituting the semiconductor is an n-type semiconductor containing 2 × 10 15 cm -3 of n-type impurities or above and the other type is a p-type semiconductor containing 2 × 10 15 cm -3 of p-type impurities or above. The p-type semiconductor is in contact with the n-type semiconductor. A pair of current introduction terminals directly heats the heating section in parallel to the contact surface and emits a part of the introduced electrons from the electron emission section.
摘要翻译: 可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极,具有高亮度和窄能量宽度的电子发射源。 金刚石电子放电阴极至少在其一部分具有单晶金刚石。 金刚石电子发射阴极包括锐化部分和加热部分。 金刚石电子发射阴极具有具有电子发射部分的锐化部分的柱状,并且由具有不同电特性的至少两种类型的半导体形成。 构成半导体的类型之一是包含n型杂质或以上的2×10 15 -3 -3的n型半导体,另一种类型是p- 其包含2×10 15 cm -3以上的p型杂质或更高的p型杂质。 p型半导体与n型半导体接触。 一对电流引入端子平行于接触表面直接加热加热部分并从电子发射部分发射一部分引入的电子。
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