公开(公告)号：WO2004092443A1

公开(公告)日：2004-10-28

申请号：PCT/JP2004/005202

申请日：2004-04-12

Applicant: 東洋製罐株式会社 ,  倉島 秀夫 ,  小林 亮 ,  山田 幸司 ,  並木 恒久

Inventor： 倉島 秀夫 ,  小林 亮 ,  山田 幸司 ,  並木 恒久

IPC: C23C16/511

CPC classification number: H01J37/32284 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H05B6/80

Abstract: 処理対象の表面に均一な薄膜層を形成でき、しかも、短時間に処理することができるマイクロ波プラズマ処理方法を提供する。プラズマ処理室１にマイクロ波を導入し、処理用ガスをプラズマ化することにより、前記プラズマ処理室内１に配置した基体１３に薄膜層を形成するマイクロ波プラズマ処理方法において、前記基体１３をプラズマ処理室１の中心軸と同軸上に固定し、前記プラズマ処理室内のマイクロ波の定在波モードを、前記基体の口部１３１から胴部１３３までは、ＴＥモード又はＴＥＭモードとし、前記基体の底部１３２は、ＴＥモードとＴＭモードが共在するモードとしたマイクロ波プラズマ処理方法としてある。

Abstract translation: 能够在未处理物体的表面上形成均匀的薄膜的微波等离子体处理方法和短期处理。 微波等离子体处理方法，其向等离子体处理室（1）引入微波以将处理气体转换为等离子体并在设置在等离子体处理室（1）中的基板（13）上形成薄膜层，其中基板 13）固定在与等离子体处理室（1）的中心轴同轴的轴上，等离子体处理室（1）中的微波驻波模式被设定为TE模式或TEM模式 衬底的口（131）到主体（133），并且到TE模和TM模共同存在于衬底的底部（132）的模式。

公开(公告)号：WO87007760A1

公开(公告)日：1987-12-17

申请号：PCT/US1987001427

申请日：1987-12-17

IPC: C23C14/02 ,  H01J27/16 ,  H01J27/18 ,  H01J37/32

CPC classification number: H01J37/32357 ,  H01J27/16 ,  H01J27/18 ,  H01J37/32256 ,  H01J37/32284 ,  H01J37/32678

Abstract: A plasma apparatus which generates a radio frequency (UHF or microwave) disk plasma (16) and a hybrid plasma (45) derived from the disk plasma. The microwave plasma acts as a source of excited ion and free radical species and electrons for the second plasma which is hybrid in that it contains species from both microwave and dc (or rf depending on bias) excitation. The hybrid plasma can be used to treat an article (43) with different species than are present in the disk plasma and provides more control in this regard than a single plasma.

Abstract translation: 一种产生射频（UHF或微波）盘等离子体（16）的等离子体装置和衍生自盘等离子体的混合等离子体（45）。 微波等离子体作为第二等离子体的激发离子和自由基物质和电子的来源，其混合在一起，因为它包含来自微波和直流（或rf取决于偏置）激发的物质。 混合等离子体可以用于处理具有不同于盘等离子体中的物质的物品（43），并且在这方面提供比单个等离子体更多的控制。

公开(公告)号：WO99017334A1

公开(公告)日：1999-04-08

申请号：PCT/IB1998/001506

申请日：1998-09-28

IPC: H05H1/24 ,  B29C37/00 ,  B29C49/06 ,  B29C49/12 ,  B29C49/22 ,  B29C49/42 ,  B65D1/00 ,  C23C16/04 ,  C23C16/511 ,  H01J37/32

CPC classification number: B29C49/42 ,  A61L2/14 ,  A61L2202/23 ,  B29C37/0025 ,  B29C49/06 ,  B29C49/12 ,  B29C49/22 ,  B29C2049/027 ,  B29C2049/129 ,  B29C2049/4294 ,  B29K2995/0067 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32284

Abstract: The apparatus for treating the inside surface of a bottle (1) in a plasma enhanced process comprises a vacuum chamber (2), a microwave confinement (3) with a microwave generator (4), evacuation means and gas feed means (5). The microwave confinement (3) is substantially cylindrical and adapted to the shape of at least the body portion of the bottle (1) to be treated as closely as possible. The microwaves are coupled into the microwave confinement (3) from the bottom side of the bottle (1) and the microwave confinement is excited in a TM mode of resonance. The inventive apparatus is very compact and very simple. It can be integrated into a stretch-blow-moulding apparatus or into a filling apparatus. For upscaling, a plurality of one-bottle apparatuses is arranged in a row or in a matrix and all the one-bottle apparatuses are connected to a net of energy, vacuum and gas supply lines. Each of the one-bottle apparatuses may have its own vacuum chamber or a plurality of microwave confinements (3) may be arranged in one common vacuum chamber.

Abstract translation: 用于在等离子体增强过程中处理瓶子（1）的内表面的装置包括真空室（2），具有微波发生器（4）的微波约束（3），排气装置和气体供给装置（5）。 微波限制（3）基本上是圆柱形的，并且适于至少要被处理的瓶子（1）的主体部分的形状尽可能接近。 微波从瓶（1）的底侧耦合到微波限制（3）中，并且微波约束以TM共振模式被激发。 本发明的装置非常紧凑并且非常简单。 它可以集成到拉伸吹塑成型设备或填充设备中。 为了升级，将多个一瓶装置排列成一排或一个矩阵，并且所有一瓶装置都连接到能量，真空和气体供应管线网上。 每个单瓶装置可以具有其自己的真空室，或者多个微波限制（3）可以布置在一个共同的真空室中。

公开(公告)号：WO2005124820A1

公开(公告)日：2005-12-29

申请号：PCT/EP2005/006245

申请日：2005-06-10

Applicant: CARL ZEISS VISION GMBH ,  NEUFFER, Andreas ,  HOLZ, Lothar

Inventor： NEUFFER, Andreas ,  HOLZ, Lothar

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  C03C17/002 ,  C23C16/511 ,  H01J37/32284 ,  H01J2237/3321

Abstract: Eine Vorrichtung (10) zum Beschichten optischer Gläser mittels plasmaunterstützter chemischer Dampfabscheidung (CVD) wird vorgeschlagen. Ein zylindrischer Reaktor (12) dient zur Aufnah­me der zu beschichtenden Gläser. Mindestens ein Mikrowellenge­nerator (24a, 24b) ist zum Einkoppeln eines Mikrowellensignals vorbestimmter Mikrowellenfrequenz in den Reaktor (12) vorgese­hen. Der mindestens eine Mikrowellengenerator (24a, 24b) weist eine Mikrowellenquelle (26a, 26b) auf, die über ein Moden-Interferenzfilter (30a, 30b) an den Reaktor (12) gekoppelt ist

Abstract translation: 用于通过等离子体增强化学气相沉积（CVD）的装置涂覆光学透镜的设备（10）的建议。 圆柱形反应器（12），用于接收待涂覆的玻璃。 至少一个微波发生器（24A，24B）提供了一种用于在微波反应器（12）耦合预定频率的微波信号。 至少一个微波发生器（24A，24B）包括微波源（26A，26B），其经由多模干涉滤光片（30A，30B）被耦合到所述反应器（12）

公开(公告)号：WO99033673A1

公开(公告)日：1999-07-08

申请号：PCT/US1998/027886

申请日：1998-12-31

IPC: H05H1/46 ,  B23K10/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22

CPC classification number: H01J37/32284 ,  H01J37/32192

Abstract: A plasma discharge device and method for removing material from a substrate having dynamic tuning, which permits operation with a variety of process gasses over a range of operating conditions. A longitudinally extending microwave cavity (2) is defined at the ends by microwave traps (20, 22), the positions of which are automatically adjustable to provide dynamic tuning. An adjustable antenna is provided, and operation utilizes the TM012 mode.

Abstract translation: 一种用于从具有动态调谐的衬底中去除材料的等离子体放电装置和方法，其允许在一定范围的工作条件下用各种工艺气体进行操作。 纵向延伸的微波腔（2）由微波陷阱（20,22）的端部限定，其位置可自动调节以提供动态调谐。 提供可调天线，操作采用TM012模式。

公开(公告)号：WO1998004758A1

公开(公告)日：1998-02-05

申请号：PCT/US1997006255

申请日：1997-04-04

Applicant: CERAMOPTEC INDUSTRIES, INC.

Inventor： CERAMOPTEC INDUSTRIES, INC. ,  BLINOV, Leonid M. ,  NEUBERGER, Wolfgang ,  PAVLOV, V. V.

IPC: C23C16/00

CPC classification number: H01J37/32229 ,  C03C17/22 ,  C03C2217/282 ,  C03C2218/153 ,  C23C16/511 ,  H01J37/32284 ,  H01J37/32357

Abstract: A method and apparatus for efficiently depositing a dielectric film with a preselected thickness pattern, in particular a homogeneous, uniform diamond or diamond-like film on large area substrates through the use of opposing plasma torches (23) and linearly superimposing of microwave modes within the reaction chamber (26) creating and maintaining an extended linear plasma in close proximity to the substrate surfaces and utilizing laminar flow of the reactant gases in the plasma and over the surfaces. Substrate surfaces can be moved past the opposing torches (23) permitting the coating of large area, rectangularly-shaped substrate surfaces in a simple manner. Alternatively, the plasma horn or horns (23) can be moved across the substrate permitting coating of large area, rectangularly-shaped substrate surfaces.

Abstract translation: 一种用于通过使用相对的等离子体焰炬（23）和在微波模式内线性叠加具有预选厚度图案的电介质薄膜，特别是在大面积衬底上均匀的均匀的金刚石或类金刚石膜的方法和装置， 反应室（26）产生并保持在衬底表面附近的延长的线性等离子体并且利用等离子体和表面上的反应物气体的层流。 衬底表面可以移动通过相对的焊炬（23），允许以简单的方式涂覆大面积矩形形状的衬底表面。 或者，可以将等离子体喇叭或喇叭（23）移动穿过基板，允许涂覆大面积的矩形形状的基板表面。

公开(公告)号：WO2015193155A1

公开(公告)日：2015-12-23

申请号：PCT/EP2015/062957

申请日：2015-06-10

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： BRANDON, John, Robert ,  FRIEL, Ian ,  COOPER, Michael, Andrew ,  SCARSBROOK, Geoffrey, Alan ,  GREEN, Ben, Llewlyn

IPC: H01J37/32 ,  C30B29/04

CPC classification number: H01J37/32201 ,  C23C16/274 ,  C23C16/458 ,  C23C16/511 ,  C30B25/105 ,  C30B25/205 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32247 ,  H01J37/32284 ,  H01J37/32293 ,  H01J37/32302 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Ρτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Ρτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％ 在初级微波谐振模式频率f中将P P注入到等离子体室中，并且其中多个微波源中的至少一些是固态微波源。

公开(公告)号：WO2012084660A1

公开(公告)日：2012-06-28

申请号：PCT/EP2011/072824

申请日：2011-12-14

Applicant: ELEMENT SIX LIMITED ,  BRANDON, John, Robert ,  CULLEN, Alexander, Lamb ,  WILLIAMS, Stephen, David ,  DODSON, Joseph, Michael ,  WILMAN, Jonathan, James ,  WORT, Christopher, John, Howard

Inventor： BRANDON, John, Robert ,  CULLEN, Alexander, Lamb ,  WILLIAMS, Stephen, David ,  DODSON, Joseph, Michael ,  WILMAN, Jonathan, James ,  WORT, Christopher, John, Howard

IPC: H01J37/32 ,  C23C16/511

CPC classification number: H01J37/32458 ,  C23C16/274 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32284

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM 011 resonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height / the resonance cavity diameter is in the range 0.3 to 1.0.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，被配置为以频率f产生微波; 等离子体室，包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于支撑微波共振模式的谐振腔，其中所述谐振腔具有从所述底座延伸到对称的中心旋转对称轴线 顶板，并且其中顶板穿过所述中心旋转对称轴线安装; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中，并且包括支撑表面，所述支撑表面用于支撑在使用中沉积所述合成金刚石材料的基底; 其中所述谐振腔被配置为具有从所述等离子体室的所述基板到所述顶板测量的高度，所述高度在所述频率f处支撑所述基座和所述顶板之间的TM011谐振模式，并且其中所述谐振腔进一步 被配置为具有在从底部测量的高度小于谐振腔的高度的50％的高度处测量的直径，其满足谐振腔高度/谐振腔直径的比率在0.3范围内的条件 到1.0。

公开(公告)号：WO2012084655A2

公开(公告)日：2012-06-28

申请号：PCT/EP2011072818

申请日：2011-12-14

Applicant: ELEMENT SIX LTD ,  DODGE CARLTON NIGEL ,  INGLIS PAUL NICOLAS ,  SCARSBROOK GEOFFREY ALAN ,  MOLLART TIMOTHY PETER ,  PICKLES CHARLES SIMON JAMES ,  COE STEVEN EDWARD ,  DODSON JOSEPH MICHAEL ,  CULLEN ALEXANDER LAMB ,  BRANDON JOHN ROBERT ,  WORT CHRISTOPHER JOHN HOWARD

Inventor： DODGE CARLTON NIGEL ,  INGLIS PAUL NICOLAS ,  SCARSBROOK GEOFFREY ALAN ,  MOLLART TIMOTHY PETER ,  PICKLES CHARLES SIMON JAMES ,  COE STEVEN EDWARD ,  DODSON JOSEPH MICHAEL ,  CULLEN ALEXANDER LAMB ,  BRANDON JOHN ROBERT ,  WORT CHRISTOPHER JOHN HOWARD

IPC: H01J37/32 ,  C23C16/27

CPC classification number: C23C16/274 ,  C01B32/25 ,  C23C16/4586 ,  C23C16/511 ,  C23C16/52 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32284 ,  Y10T428/12993

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface,the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布 在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至5​​0％以上范围内的峰值Ez电场强度 比中央Ez电场强度高。

公开(公告)号：WO1998022977A1

公开(公告)日：1998-05-28

申请号：PCT/JP1997004225

申请日：1997-11-20

Applicant: TOKYO ELECTRON LIMITED ,  ISHIZUKA, Shuichi ,  NAKASE, Risa ,  AOKI, Takeshi

Inventor： TOKYO ELECTRON LIMITED

IPC: H01L21/31

CPC classification number: H01J37/32229 ,  H01J37/32192 ,  H01J37/32284

Abstract: A plasma treating device which can generate uniform plasma over a wide area and can perform plasma treatment on a substrate (wafer W) to be treated with high in-plane uniformity. A transmissive window (23) for transmitting microwaves is provided in the ceiling section of a vacuum vessel (2) provided with a plasma chamber (21) and a film forming chamber (22) and a waveguide (4) for supplying microwaves of 2.45 GHz in frequency to the vacuum vessel (2) in a TM mode is provided on the window (23). The waveguide (4) is composed of a rectangular waveguide (41), a cylindrical waveguide (42) which works as a TM mode converter (42), and a conical waveguide (43) and the exit side of the waveguide (43) is connected to the upper surface of the window (23). When the microwaves are transmitted into the vessel (2) in the TM mode and, at the same time, a magnetic field is formed in the vessel (2) and the exit-side inside diameter OA of the waveguide (43) is adjusted to 130-160 mm, the density of plasma in the plasma chamber (1) becomes uniform and plasma treatment can be performed on a wafer W having a size of, for example, 8 inches with high in-plane uniformity.

Abstract translation: 一种等离子体处理装置，其能够在广泛的区域上产生均匀的等离子体，并且可以在待处理的基板（晶片W）上进行等离子体处理，并具有高的面内均匀性。 在具有等离子体室（21）和成膜室（22）的真空容器（2）的顶部设置用于传送微波的透射窗（23）和用于提供2.45GHz的微波的波导（4） 在窗口（23）上设置以TM模式向真空容器（2）的频率。 波导（4）由矩形波导（41），作为TM模转换器（42）的圆柱形波导（42）和波导（43）的出射侧的锥形波导（43）构成 连接到窗（23）的上表面。 当以TM模式将微波传输到容器（2）中时，同时在容器（2）中形成磁场，将波导（43）的出射侧内径OA调整为 130-160mm，等离子体室（1）中的等离子体的密度变得均匀，并且可以对具有例如8英寸的尺寸的晶片W进行等离子体处理，具有高的面内均匀性。