公开(公告)号：WO2018220447A2

公开(公告)日：2018-12-06

申请号：PCT/IB2018/000914

申请日：2018-05-24

Applicant: SEGTON ADVANCED TECHNOLOGIE SAS

Inventor： KUZNICKI, Zbigniew

IPC: H01L31/068 ,  H01L31/20 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/18 ,  B82Y30/00

CPC classification number: H01L31/035245 ,  B82Y20/00 ,  B82Y40/00 ,  G02B1/002 ,  H01L21/26506 ,  H01L21/26513 ,  H01L31/035254 ,  H01L31/03762 ,  H01L31/03845 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547

Abstract: The invention provides a solution through wide-beam, wide-spot, well-controlled ion- amorphization, which causes almost unidirectional crystal lattice agitations and minimizes lateral and multidirectional lattice vibrations at the origin of hard extended structural defects. The crystal lattice is not too deformed during the ion implantation shock remaining within technically acceptable limits. This is particularly useful in the case of devices with a large active surface area as light-to-electricity converters. The crystal damage and the energy expenditure of the post-implantation thermal treatment are significantly reduced opening the way to costly controlled industrial applications. This invention is preferably applicable in the field of new generation, high efficiency all-silicon light-to-electricity converters.

公开(公告)号：WO2015053578A1

公开(公告)日：2015-04-16

申请号：PCT/KR2014/009513

申请日：2014-10-10

Applicant: 한양대학교 산학협력단

Inventor： 박재근 ,  심태헌 ,  김달호 ,  김지헌 ,  신재우 ,  박주형

IPC: H01L31/04 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/022425 ,  H01L31/03845 ,  H01L51/424 ,  H01L51/447 ,  Y02E10/549 ,  Y02P70/521

Abstract: 본 발명은 기판 상에 형성된 제 1 전극과, 제 1 전극 상에 접촉 형성된 복수의 나노 크리스탈을 포함하는 나노 크리스탈층과, 복수의 나노 크리스탈을 덮도록 제 1 전극 상에 형성된 정공 이동층과, 정공 이동층 상에 형성된 광활성층과, 광활성층 상에 형성된 제 2 전극을 포함하는 태양 전지 및 그 제조 방법을 제시한다.

Abstract translation: 本发明提供一种太阳能电池及其制造方法，所述太阳能电池包括：形成在基板上的第一电极; 与所述第一电极接触并形成的纳米晶体层，所述纳米晶体层包含多个纳米晶体; 形成在所述第一电极上以覆盖所述多个纳米晶体的空穴转移层; 形成在空穴转移层上的光学有源层; 以及形成在所述光学有源层上的第二电极。

公开(公告)号：WO2015082940A1

公开(公告)日：2015-06-11

申请号：PCT/GB2014/053628

申请日：2014-12-05

Applicant: NANOCO TECHNOLOGIES LTD

Inventor： NEWMAN, Christoper

IPC: H01L31/032 ,  H01L31/0749 ,  B82Y30/00

CPC classification number: H01L31/0384 ,  B82Y30/00 ,  B82Y40/00 ,  C09D11/52 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/03845 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

Abstract: A method for the preparation of CIGS-type core-shell nanoparticles produces core-shell nanoparticles that may include a quaternary or ternary metal chalcogenide core. The core may be substantially surrounded by a binary metal chalcogenide shell. A core- shell nanoparticle may be deposited on a PV cell contact (e.g., a molybdenum electrode) via solution-phase deposition. The deposited particles may then be melted or fused into a thin absorber film for use in a photovoltaic device.

Abstract translation: 用于制备CIGS型核 - 壳纳米颗粒的方法产生可以包括季或金属硫族化物核心的核 - 壳纳米颗粒。 芯可以基本上被二元金属硫族化物壳包围。 可以通过溶液相沉积将核 - 壳纳米颗粒沉积在PV电池接触（例如，钼电极）上。 然后将沉积的颗粒熔化或熔融成薄的吸收膜，用于光伏器件。

公开(公告)号：WO2013095924A1

公开(公告)日：2013-06-27

申请号：PCT/US2012/067890

申请日：2012-12-05

Applicant: SUNPOWER CORPORATION

Inventor： LOSCUTOFF, Paul ,  MOLESA, Steve ,  KIM, Taeseok

IPC: H01L31/00

CPC classification number: H01L31/02167 ,  B82Y30/00 ,  H01L31/022458 ,  H01L31/03682 ,  H01L31/03845 ,  H01L31/18

Abstract: A laser contact process is employed to form contact holes to emitters of a solar cell (402). Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film (403). Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles (404). For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Abstract translation: 采用激光接触方法来形成与太阳能电池（402）的发射体的接触孔。 在太阳能电池的衬底上形成掺杂的硅纳米颗粒。 单个或多个硅纳米颗粒的表面涂覆有纳米颗粒钝化膜（403）。 通过将激光束照射在钝化的硅纳米颗粒（404）上而形成与太阳能电池的发射体的接触孔。 例如，激光接触过程可以是激光烧蚀过程。 在这种情况下，可以通过在向发射体形成接触孔之前将来自硅纳米颗粒的掺杂剂扩散而形成发射体。 作为另一示例，激光接触工艺可以是激光熔化工艺，其中硅纳米颗粒的一部分被熔化以形成发射器和与发射器的接触孔。

公开(公告)号：WO2013001373A2

公开(公告)日：2013-01-03

申请号：PCT/IB2012/001800

申请日：2012-06-28

Applicant: BUSKÜHL, Martin

Inventor： BUSKÜHL, Martin

IPC: H01L31/0256

CPC classification number: H01L31/035218 ,  H01L31/0322 ,  H01L31/035281 ,  H01L31/0384 ,  H01L31/03845 ,  Y02E10/52 ,  Y02E10/541

Abstract: Nanoteilchen für eine solartechnische Anlage zur Steigerung der Lichtnutzung, mit einem Kern ausgewählt aus Materialien bestehend aus Metallen, Metalllegierungen, Halbleitern, elektrisch leitenden Nichtmetallen, elektrisch leitenden Verbindungen und Mischungen daraus, wobei um den Kern wenigstens eine erste Hülle angeordnet ist.

Abstract translation: 为提高光利用率，具有选自由金属，金属合金，半导体，导电非金属，导电性化合物以及它们的混合物的材料中选择的核心的太阳能植物纳米颗粒，围绕芯，第一壳设置至少。

公开(公告)号：WO2010018490A2

公开(公告)日：2010-02-18

申请号：PCT/IB2009/053408

申请日：2009-08-05

Applicant: NXP B.V. ,  FURUKAWA, Yukiko ,  PASVEER, Frank ,  KLOOTWIJK, Johan ,  KOCHUPURACKAL, Jinesh

Inventor： FURUKAWA, Yukiko ,  PASVEER, Frank ,  KLOOTWIJK, Johan ,  KOCHUPURACKAL, Jinesh

IPC: H01L31/0384

CPC classification number: H01L31/03529 ,  H01L31/03845 ,  Y02E10/50

Abstract: A photovoltaic cell (100) which comprises a semiconductive matrix (102) of a first type of conductivity, and a plurality of semiconductive nanoclusters (104) of a second type of conductivity which differs from the first type of conductivity which are at least partially embedded in the semiconductive matrix (102) so that a pn-junction (106) is formed between the plurality of semiconductive nanoclusters (104) and the semiconductive matrix (102).

Abstract translation: 一种光电池（100），其包括第一导电类型的半导体基体（102）和与第一导电类型不同的第二类导电性的多个半导体纳米团簇（104），所述半导体纳米团簇至少部分地嵌入 在半导体基体（102）中，使得在多个半导体纳米簇（104）和半导体基体（102）之间形成pn结（106）。

公开(公告)号：WO2016192832A1

公开(公告)日：2016-12-08

申请号：PCT/EP2016/000746

申请日：2016-05-06

Applicant: MERCK PATENT GMBH

Inventor： DESHMUKH, Ranjan Deepak ,  HOOKER, Rebekah ,  SAHOO, Yudhisthira ,  MISKIEWICZ, Pawel

IPC: C01G30/00 ,  C09D11/52 ,  H01L31/0304

CPC classification number: C09D11/52 ,  B22F1/0018 ,  B22F9/20 ,  B22F2302/45 ,  C01G30/00 ,  C01P2002/72 ,  C09D11/037 ,  C09D11/322 ,  H01L31/0304 ,  H01L31/03845 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

Abstract: This invention relates to a process for synthesizing InSb nanoparticles, a method to stabilize them, and a method to provide a a photodetector to detect infrared light.

Abstract translation: 本发明涉及一种合成InSb纳米颗粒的方法，一种使其稳定的方法，以及提供一种用于检测红外光的光电检测器的方法。

公开(公告)号：WO2015172019A1

公开(公告)日：2015-11-12

申请号：PCT/US2015/029886

申请日：2015-05-08

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： BROWN, Patrick, R. ,  KIM, Donghun ,  BAWENDI, Moungi, G. ,  GROSSMAN, Jeffrey, C. ,  BULOVIC, Vladimir

IPC: B82B1/00 ,  H01L31/06 ,  H01L31/18

CPC classification number: H01L51/426 ,  H01L31/0296 ,  H01L31/03845 ,  H01L51/0077 ,  H01L51/0558 ,  H01L51/441 ,  H01L2251/301 ,  Y02E10/549

Abstract: A method of improving performance of a photovoltaic device can include modifying a surface energy level of a nanocrystal through ligand exchange. A photovoltaic device can include a layer that includes a nanocrystal with a surface energy modified through ligand exchange.

Abstract translation: 提高光伏器件性能的方法可以包括通过配体交换来改变纳米晶体的表面能级。 光伏器件可以包括具有通过配体交换改性的表面能的纳米晶体的层。

公开(公告)号：WO2014098981A1

公开(公告)日：2014-06-26

申请号：PCT/US2013/046434

申请日：2013-06-18

Applicant: SUNPOWER CORPORATION ,  LOSCUTOFF, Paul ,  SMITH, David D. ,  MORSE, Michael ,  WALDHAUER, Ann ,  KIM, Taeseok ,  MOLESA, Steven Edward

Inventor： LOSCUTOFF, Paul ,  SMITH, David D. ,  MORSE, Michael ,  WALDHAUER, Ann ,  KIM, Taeseok ,  MOLESA, Steven Edward

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L31/182 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/03845 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/939 ,  Y10S977/948

Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract translation: 描述了使用硅纳米颗粒制造太阳能电池发射极区域的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的发射极区域的方法包括在设置在太阳能电池的基板的表面上方的电介质层的上方形成掺杂的硅纳米颗粒的区域。 在掺杂的硅纳米颗粒的区域上形成一层硅。 硅层的至少一部分与掺杂的硅纳米颗粒的区域的至少一部分混合以形成设置在电介质层上的掺杂多晶硅层。

公开(公告)号：WO2012131496A3

公开(公告)日：2013-07-11

申请号：PCT/IB2012000867

申请日：2012-03-22

Applicant: KUZNICKI ZBIGNIEW ,  MEYRUEIS PATRICK

Inventor： KUZNICKI ZBIGNIEW ,  MEYRUEIS PATRICK

IPC: H01L31/028 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035254 ,  B82Y20/00 ,  B82Y40/00 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035245 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/03845 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/50 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably encrease the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.

Abstract translation: 本发明旨在减少并优选地消除载体收集极限效应，以便显着增加转化效率。 这种改进通过非晶化层厚度的适当改性或甚至分离非晶化束或非晶化纳米粒子的不连续性来实现。