公开(公告)号：WO2023059824A1

公开(公告)日：2023-04-13

申请号：PCT/US2022/045936

申请日：2022-10-06

Applicant: ENTEGRIS, INC.

Inventor： BATTLE, Scott L. ,  NAITO, Donn K. ,  GREGG, John N. ,  THOMAS, Jacob ,  PARKER, Chase ,  SCHINDLER, James ,  HENDRIX, Bryan C. ,  OLSON, Benjamin H.

IPC: C23C16/448 ,  C23C16/4481 ,  C23C16/45544

Abstract: A tray for an ampoule of a delivery system of solid precursor materials used in Atomic Layer Deposition (ALD) processes, Chemical Vapor Deposition (CVD) processes or both. The tray is configured to be able to have a reduced profile size when compressed to enhance the ease of which the tray can be inserted into the ampoule, and the tray is configured to expand in size to make improved contact with inner wall surfaces of the ampoule to provide improved heat transfer from the inner wall to the tray and ultimately to the solid precursor materials disposed on the tray.

公开(公告)号：WO2021250499A1

公开(公告)日：2021-12-16

申请号：PCT/IB2021/054618

申请日：2021-05-27

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： QI, Yabing ,  QIU, Longbin ,  HE, Sisi ,  ONO, Luis Katsuya

IPC: C23C16/30 ,  C23C16/448 ,  C23C16/46 ,  C23C16/48 ,  C23C16/56 ,  C30B25/02 ,  C30B29/12 ,  H01L33/00 ,  H01L51/00 ,  C23C16/0272 ,  C23C16/4481 ,  C23C16/463 ,  C23C16/482 ,  C30B25/10 ,  C30B25/165 ,  C30B25/18 ,  H01G9/0036 ,  H01G9/2009 ,  H01L51/0002 ,  H01L51/001 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/56

Abstract: Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials.

公开(公告)号：WO2022271778A1

公开(公告)日：2022-12-29

申请号：PCT/US2022/034451

申请日：2022-06-22

Applicant: APPLIED MATERIALS, INC.

Inventor： WHITE, Carl ,  MARQUARDT, David ,  VERGHESE, Mohith

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/4481

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2021129450A1

公开(公告)日：2021-07-01

申请号：PCT/CN2020/136338

申请日：2020-12-15

Applicant: 重庆大学

Inventor： 陈显平 ,  张枫 ,  王泽平 ,  郑凯 ,  喻佳兵 ,  陶璐琪

IPC: C23C16/448 ,  C23C16/458 ,  C23C16/30 ,  C23C16/00 ,  C23C16/305 ,  C23C16/4481 ,  C23C16/4581

Abstract: 一种基于化学气相沉积的均匀材料层制备方法，包括：将衬底（8）及载物台（10）放置在反应腔中，所述衬底（8）设置在所述载物台（10）上，所述衬底（8）的生长面背离于所述载物台（10）；向所述反应腔内提供第一气相源物质及第二气相源物质进行化学气相沉积反应，在衬底（8）的生长面上形成材料层。通过将衬底（8）的生长面背离于载物台（10），衬底（8）的生长面上气流流速分布更为均匀，从而能够大大提高材料层的均匀性，能够大大提高材料层的质量。

公开(公告)号：WO2021125728A2

公开(公告)日：2021-06-24

申请号：PCT/KR2020/018282

申请日：2020-12-14

Applicant: 주식회사 포스코

Inventor： 권민석 ,  이상원 ,  배진수

IPC: C21D8/12 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/00 ,  C22C38/60 ,  C23C16/30 ,  C21D8/1222 ,  C21D8/1233 ,  C21D8/1272 ,  C21D8/1283 ,  C22C38/008 ,  C23C16/448 ,  C23C16/4481

Abstract: 본 개시는 슬라브를 가열하는 단계; 상기 가열한 슬라브를 열간 압연하여 열연판을 제조하는 단계; 상기 열연판을 냉간 압연하여 냉연판을 제조하는 단계; 상기 냉연판을 탈탄소둔하는 단계; 상기 탈탄소둔된 냉연판의 일면 또는 양변의 일부 또는 전부에 화학기상증착(CVD) 공정을 이용하여 세라믹 코팅층을 형성하는 단계; 및 상기 세라믹 코팅층을 형성한 냉연판을 최종 소둔 하는 단계를 포함하는 제조방법 및 이로부터 제조된 방향성 전기강판을 제공하기 위함이다.

公开(公告)号：WO2023278721A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035758

申请日：2022-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： MARQUARDT, David ,  WHITE, Carl ,  VERGHESE, Mohith

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/4402 ,  C23C16/4481

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2023278129A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/033187

申请日：2022-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： DURAND, William J. ,  CHOI, Kenric ,  KWONG, Garry K.

IPC: C23C16/448 ,  H01L21/67 ,  C23C16/4481 ,  C23C16/45561

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. Alternating first and second elongate walls in the container are arranged to define longitudinal flow channels containing a precursor material, and alternating first and second passages between each of the longitudinal flow channels permitting fluid communication between adjacent longitudinal flow channels, wherein the first passages are located in a lower portion of the precursor cavity and the second passages are located an upper portion of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.

公开(公告)号：WO2021126996A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065336

申请日：2020-12-16

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AMERICAN AIR LIQUIDE, INC.

Inventor： LIU, Yumin

IPC: H01L21/31 ,  C23C16/4402 ,  C23C16/4481

Abstract: Disclosed are vapor delivery systems comprise a housing body defining an Interior volume therein, a plurality of flow resistors for receiving a carrier gas, to generate gas distribution lines in the interior volume, at least two surfaces having the solid or liquid precursor applied thereto to allow passage of the carrier gas thereover along the gas distribution lines to mix with a solid or liquid precursor vapor, a gas-collecting device downstream of the gas distribution lines to deliver a mixture of the carrier gas and the solid or liquid precursor vapor out of the system, and a flow controller fluidicaily connected to a carrier gas source to control a feed flow rate of the carrier gas feeding into the interior volume. A gas distribution flow rate along each gas distribution line is controlled by the feed flow rate of the carrier gas feeding into the interior volume.