公开(公告)号：WO2023278605A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035559

申请日：2022-06-29

申请人： INVENSAS BONDING TECHNOLOGIES, INC.

发明人： FOUNTAIN, Gaius, Gillman, Jr.

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/05546 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06138 ,  H01L2224/08147 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06565 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L2924/01029 ,  H01L2924/04642 ,  H01L2924/0504 ,  H01L2924/0544 ,  H01L2924/059

摘要： A bonded structure is disclosed. The bonded structure can include a first element that includes a first bonding layer, the first bonding layer that has a first contact pad and a routing trace. The routing trace is formed at the same level as the first contact pad. The bonded structure can include a second element that includes a second bonding layer that has a second contact pad. The first element and the second element are directly bonded such that the first contact pad and the second contact pad are directly bonded without an intervening adhesive

公开(公告)号：WO2022212596A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022677

申请日：2022-03-30

申请人： INVENSAS BONDING TECHNOLOGIES, INC.

发明人： UZOH, Cyprian, Emeka ,  WORKMAN, Thomas

IPC分类号： H01L23/00 ,  H01L2224/03009 ,  H01L2224/038 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/80004 ,  H01L2224/80009 ,  H01L2224/80031 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/94 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/94 ,  H01L2924/095

摘要： Disclosed herein are methods for direct bonding. In some embodiments, a direct bonding method comprises preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, providing a protective layer over the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.