公开(公告)号：WO2021259477A1

公开(公告)日：2021-12-30

申请号：PCT/EP2020/067772

申请日：2020-06-25

申请人： HUAWEI TECHNOLOGIES CO., LTD. ,  BADAROGLU, Mustafa

发明人： BADAROGLU, Mustafa

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L2224/03845 ,  H01L2224/04105 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/80006 ,  H01L2224/80013 ,  H01L2224/80047 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06593 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/94 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/50

摘要： A method of stacking semiconductor components, to obtain a semiconductor wafer assembly, and for forming a semiconductor die assembly therefrom, is provided. The method comprises providing a first wafer comprising at least a first and a second die in a first and a second position, respectively; providing at least a third and a fourth die, to be stacked on the first and the second die, respectively; placing the third and fourth die on a carrier wafer in positions matching at least a part of the first and second position, respectively; applying insulating material on the carrier wafer outside of the third and the fourth dies; and placing the carrier wafer on the first wafer to obtain a first die stack of the first and third dies and a second die stack of the second and fourth dies, causing bonding of the first and third dies and the second and fourth dies, respectively.