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    THICKNESS MODE RESONATOR
    1.
    发明申请
    THICKNESS MODE RESONATOR 审中-公开

    公开(公告)号：WO2021034365A1

    公开(公告)日：2021-02-25

    申请号：PCT/US2020/034615

    申请日：2020-05-27

    Applicant: MURATA MANUFACTURING CO., LTD. ,  KAAJAKARI, Ville

    Inventor： KAAJAKARI, Ville

    IPC: H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/15 ,  B06B1/06 ,  G10K11/02 ,  G10K11/04

    Abstract: A resonator that includes a substrate with a cavity that extends in a principal surface thereof and a vibrating resonator above the principal surface of the substrate and including bottom and top electrodes with a piezoelectric layer disposed therebetween. Moreover, a silicon dioxide layer is provided above the substrate and below the vibrating resonator to cover the cavity of the substrate, and a silicon layer is provided between the silicon dioxide layer and the vibrating resonator. The bottom electrode, the top electrode and the piezoelectric layer of the vibrating resonator each have a thickness configured to accommodate substantially a half wavelength λ/2 of the resonator, and the silicon layer has a thickness that accommodates substantially multiple of the half wavelength λ/2 of the resonator.

    ELECTRICALLY RESPONSIVE DEVICE
    5.
    发明申请
    ELECTRICALLY RESPONSIVE DEVICE 审中-公开
    电动响应装置

    公开(公告)号：WO2006107961A2

    公开(公告)日：2006-10-12

    申请号：PCT/US2006012491

    申请日：2006-04-05

    Applicant: BIOSCALE INC ,  MASTERS BRETT P ,  MILLER MICHAEL F

    Inventor： MASTERS BRETT P ,  MILLER MICHAEL F

    IPC: H03H3/00 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02

    CPC classification number: G01N29/036 ,  G01N9/002 ,  G01N2291/0256

    Abstract: Electrically responsive devices and methods for fabricating electrically responsive devices involves applying an electrically responsive material (e.g., an electroactive material) over at least a portion of a surface of a substrate material and applying an electrode material over at least a portion of a surface of the electrically responsive material. At least one region of the electrode material is selectively removed exposing the electrically responsive material. At least some of the electrically responsive material is selectively removed in a region corresponding to the at least one region of the electrode material.

    Abstract translation: 用于制造电响应装置的电响应装置和方法包括在基底材料的表面的至少一部分上施加电响应材料（例如，电活性材料），并将电极材料施加到至少一部分表面上 电响应材料。 选择性地去除电极材料的至少一个区域，暴露出电响应材料。 在对应于电极材料的至少一个区域的区域中选择性地去除至少一些电响应材料。

    RESONATOR STRUCTURE AND METHOD OF PRODUCING IT
    6.
    发明申请
    RESONATOR STRUCTURE AND METHOD OF PRODUCING IT 审中-公开
    谐振器结构及其生产方法

    公开(公告)号：WO2005034345A8

    公开(公告)日：2006-07-20

    申请号：PCT/IB2004051867

    申请日：2004-09-27

    Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  LOEBL HANS PETER ,  MILSOM ROBERT FREDERICK ,  METZMACHER CHRISTOF

    Inventor： LOEBL HANS PETER ,  MILSOM ROBERT FREDERICK ,  METZMACHER CHRISTOF

    IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H9/56

    CPC classification number: H03H9/175 ,  H03H3/04 ,  H03H9/564 ,  H03H2003/0428 ,  Y10T29/42

    Abstract: In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.

    Abstract translation: 为了提供特别是诸如膜BAW谐振器（FBAR）或固体安装的BAW谐振器（SBAR）的体声波（BAW）谐振器的谐振器结构（100），包括至少一个衬底（10 ）; 施加或沉积在所述衬底（10）上的至少一个反射器层（20）; 至少一个底部电极层（特别是底部电极）施加或沉积在反射器层（20）上; 施加或沉积在底部电极层（30）上的至少一个压电层（40），特别是C轴正常压电层; 至少一个顶部电极层（50），特别是顶部电极，施加或沉积在底部电极层（30）上和/或压电层（40）上，使得压电层（40）位于底部电极 层（30）和顶部电极层（50），提出在至少一个空间中的至少一个空间中施加或沉积至少一个不重叠的区域中的至少一个电介质层（63,65） 底部电极层（30）和顶部电极层（50）。 本发明还涉及使其使用这种谐振器结构的方法。

    圧電共振部品の周波数調整方法及び圧電共振部品
    7.
    发明申请
    圧電共振部品の周波数調整方法及び圧電共振部品 审中-公开
    压电谐振器频率调整方法和压电谐振器

    公开(公告)号：WO2005071832A1

    公开(公告)日：2005-08-04

    申请号：PCT/JP2004/016043

    申请日：2004-10-28

    Applicant: 株式会社村田製作所 ,  池田 功

    Inventor： 池田 功

    IPC: H03H3/04

    CPC classification number: H03H9/0514 ,  H03H3/04 ,  H03H9/02086 ,  H03H9/0547 ,  H03H9/58

    Abstract: 　上方からエネルギー線を照射して電極をエッチングするようにして周波数調整を行った場合に、絶縁抵抗の低下、短絡不良及び電極間マイグレーションなどが生じ難い、圧電共振部品の周波数調整方法を提供する。 　側面１４ａ，１４ｂ及び上面を有する圧電体１４と、圧電体１４の上面に設けられた電極１５とを有し、側面１４ａ，１４ｂが、上端に比べて下方部分が圧電体１４の中心側に位置するように傾斜面とされている圧電共振部品の上面に開口部２２ａを有するマスク２２を配置し、上方からイオンビームを照射することにより圧電共振部品の周波数を調整する周波数調整方法。

    Abstract translation: 提供了一种压电谐振器频率调节方法，用于通过从上方施加能量射线来进行用于蚀刻电极的频率调节时，抑制绝缘电阻，短路缺陷和电极间迁移的降低。 压电谐振器包括：具有侧表面（14a，14b）和上表面的压电体（14）; 以及布置在所述压电体（14）的上表面上的电极（15）。 侧面（14a，14b）倾斜，使得下部与上端相比朝向压电体（14）的中心移动。 具有开口（22a）的掩模（22）布置在压电谐振器的上表面上，从而从上方施加离子束以调节压电谐振器的频率。

    BULK RESONATOR
    8.
    发明申请
    BULK RESONATOR 审中-公开

    公开(公告)号：WO2003028211A3

    公开(公告)日：2003-04-03

    申请号：PCT/US2002/027681

    申请日：2002-08-29

    Applicant: HONEYWELL INTERNATIONAL INC.

    Inventor： PECZALSKI, Andrzej

    IPC: H03H3/04

    Abstract: A resonator having temperature and electronic compensation. The resonator has several layers on a substrate having opposite thermal coefficients of the sound velocity for temperature compensation. Also, the frequency of the resonator is adjusted in accordance with an external time reference. The resonator has a high quality factor and a very small size.

    THIN FILM RESONATOR AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    THIN FILM RESONATOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    薄膜共振器及其制造方法

    公开(公告)号：WO02039537A1

    公开(公告)日：2002-05-16

    申请号：PCT/KR2001/001894

    申请日：2001-11-07

    IPC: H03H9/00 ,  H03H3/02 ,  H03H3/04 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H01P7/00

    CPC classification number: H03H9/172 ,  H03H3/04 ,  H03H9/02133 ,  H03H9/0542 ,  H03H2003/027 ,  H03H2009/241

    Abstract: A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.

    Abstract translation: 公开了一种具有增强性能的薄膜谐振器及其制造方法。 薄膜谐振器包括支撑装置，第一电极，电介质层和第二电极。 支撑装置具有多个柱和形成在柱上的支撑层。 第一电极，电介质层和第二电极依次形成在支撑层上。 薄膜谐振器非常小，可以高度集成，并且可以调节谐振器的介电层的厚度，以实现包括无线电，中频和低频的多个频带的集成。 此外，薄膜谐振器由于其紧凑的基板而使干扰最小化并且具有理想的尺寸，使得薄膜谐振器非常小，而且包括三维浮动结构。

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