Abstract:
Techniques are disclosed for forming a monolithic integrated circuit semiconductor structure that includes a radio frequency (RF) frontend portion and may further include a CMOS portion. The RF frontend portion includes componentry implemented with column III-N semiconductor materials such as gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), and compounds thereof, and the CMOS portion includes CMOS logic componentry implemented with semiconductor materials selected from group IV of the periodic table, such as silicon, germanium, and/or silicon germanium (SiGe). Either of the CMOS or RF frontend portions can be native to the underlying substrate to some degree. The techniques can be used, for example, for system-on-chip integration of III-N transistors and/or RF filters, along with column IV CMOS devices on a single substrate. In a more general sense, the techniques can be used for SoC integration of an RF frontend having diverse III-N componentry on a single substrate, in accordance with some embodiments.
Abstract:
A bandpass filter includes a combination of a BAW filter and a patterned planar filter with stubs. The BAW filter is composed of a plurality of piezoelectric resonators to give a specific frequency bandpass, while the planer filter is configured to attenuate frequencies near and outside the bandpass. The resonators are connected in a ladder configuration between a first signal transmission path and a ground. The planar filter includes a strip line formed on a dielectric layer to define a second signal transmission path. The BAW filter and the planar filter are formed on a common substrate with the first and second transmission paths connected to each other. The BAW filter, in combination with the patterned planar filter added with the stub, can improve a deep near-band rejection inherent to the BAW filter, exhibiting an excellent out-of-band rejection over certain adjacent frequency ranges outside of the bandpass, and therefore give a sharp and wide bandpass.
Abstract:
This invention relates to an oscillator having reduced sensitivity to acceleration. The oscillator includes a plurality of asymmetrically mounted resonator portions each having an active resonance region. The asymmetric mounting of the resonator portions means that each resonator portion has an axis passing through its active resonance region along which the acceleration sensitivity vector is dominant, i.e. the sensitivity to acceleration along the direction defined by one axis is much greater than the sensitivity to acceleration in other directions. The resonators are mounted in an oscillator such that their dominant axes are directed in different directions, e.g. an anti-parallel arrangement, which means that the dominant acceleration sensitivity vectors can cancel each other out.
Abstract:
A duplexer including an FBAR band pass filter that can be easily embodied in single chip, and a method for manufacturing the same are disclosed. The duplexer of a mobile communication device includes a transmitting band pass filter, formed on an upper portion of a substrate, having at least two FBARs electrically connected to each other, a receiving band pass filter, formed on an other side of the substrate, having at least two FBARs electrically connected to each other, and a page shifter electrically connected with the transmitting band pass filter and the receiving band pass filter. Since the transmitting and receiving band pass filter and the inductor can be integrated into one chip, a duplexer with minimized size can be 10 provided in response to the request of miniaturization and lightness of various mobile communication device. Moreover, since the transmitting or receiving band pass filter according to the present invention can be embodied in a remarkable size in comparison with the conventional SAW band pass filter as well as has a low insertion loss and low power consumption. Thus, an interface design and a terminal operating programming can be easily achieved, and a region of a board with a duplexer is mounted in a mobile communication device can be remarkably reduced.