METHODS AND APPARATUS FOR PEDESTAL RING RESONATORS
    2.
    发明申请
    METHODS AND APPARATUS FOR PEDESTAL RING RESONATORS 审中-公开
    PEDESTAL环形谐振器的方法和装置

    公开(公告)号:WO2016086090A1

    公开(公告)日:2016-06-02

    申请号:PCT/US2015/062590

    申请日:2015-11-25

    Abstract: A device includes a substrate, a pedestal extending from the substrate, and a ring resonator disposed on the pedestal above the substrate. The ring resonator has a resonance wavelength greater than 1.5 μm and includes at least one of silicon and chalcogenide glass. The device can be used as a ring resonator sensor or a light source. The ring resonator is substantially transparent to mid-infrared radiation to reduce optical losses. The pedestal has a narrower width compared to the ring resonator to generate improved interaction between evanescent fields of light in the ring resonator and analytes nearby the ring resonator, thereby increasing sensing sensitivity. In addition, fabrication of the device is compatible with complementary metal-oxide-semiconductor (CMOS) processes and hence is amenable to large scale manufacturing.

    Abstract translation: 一种器件包括衬底,从衬底延伸的基座和设置在衬底上的基座上的环形谐振器。 环形谐振器具有大于1.5μm的谐振波长,并且包括硅和硫族化物玻璃中的至少一种。 该器件可用作环形谐振器传感器或光源。 环形谐振器对中红外辐射基本上是透明的,以减少光损耗。 基座与环形谐振器相比具有更窄的宽度,以在环形谐振器中的渐逝光场和环形谐振器附近的分析物之间产生改善的相互作用,从而增加感测灵敏度。 此外,器件的制造与互补金属氧化物半导体(CMOS)工艺兼容,因此适合于大规模制造。

    FABRICATION OF HIGHLY FLEXIBLE NEAR-INFRARED METAMATERIALS
    3.
    发明申请
    FABRICATION OF HIGHLY FLEXIBLE NEAR-INFRARED METAMATERIALS 审中-公开
    高灵敏近红外金属的制造

    公开(公告)号:WO2013091583A1

    公开(公告)日:2013-06-27

    申请号:PCT/CN2012/087327

    申请日:2012-12-24

    Abstract: A method and apparatus of fabrication of a multilayer flexible metamaterial can be fabricated using flip chip transfer (FCT) technique. This technique is different from other similar techniques such as metal lift off process, which fabricates the nanostructures directly onto the flexible substrate or nanometer printing technique. It is a solution-free FCT technique using double-side optical adhesive as the intermediate transfer layer and a tri-layer metamaterial nanostructures on a rigid substrate can be transferred onto adhesive first. Another embodiment of the present invention is the fabrication method and apparatus that allows the transfer of the metamaterial from a rigid substrate such as glass, quartz and metals onto a flexible substrate such as plastic or polymer film. Thus, a flexible metamaterial can be fabricated independent of the original substrate used.

    Abstract translation: 可以使用倒装芯片转移(FCT)技术制造多层柔性超材料的制造方法和装置。 这种技术与其他类似的技术不同,例如金属剥离工艺,其将纳米结构直接制造到柔性衬底上或纳米印刷技术上。 使用双面光学粘合剂作为中间转印层是无溶液的FCT技术,并且刚性基材上的三层超材料纳米结构可以首先转移到粘合剂上。 本发明的另一实施例是允许将超材料从诸如玻璃,石英和金属的刚性基底转移到诸如塑料或聚合物膜的柔性基底上的制造方法和装置。 因此,可以独立于使用的原始衬底来制造柔性超材料。

    HOLLOW SUPPORTS AND ANCHORS FOR MECHANICAL RESONATORS
    4.
    发明申请
    HOLLOW SUPPORTS AND ANCHORS FOR MECHANICAL RESONATORS 审中-公开
    机身谐振器的支撑和支撑

    公开(公告)号:WO2013059749A1

    公开(公告)日:2013-04-25

    申请号:PCT/US2012/061221

    申请日:2012-10-19

    Abstract: A micromechanical resonator having one or more anchoring stems which are hollow to increase resonator Q factor. By way of example a micromechanical disk resonator embodiment is shown utilizing a resonant micromechanical disk anchored by a stem between at least one electrode used for input and output. To increase resonator Q, a hollow stem is utilized in which an outer thickness of stem material surrounds a hollow area interior of the stem, or that is fabricated with a plurality of vias and/or fabricated substructures containing hollow spaces in the stem material. Measurements have confirmed that Q values can be increased using the hollow core stems by a factor of 2.9 times in certain implementations and operating modes.

    Abstract translation: 具有一个或多个锚定杆的微机械谐振器,其中空以增加谐振器Q因子。 作为示例,微机械盘谐振器实施例被示出为利用由用于输入和输出的至少一个电极之间的杆固定的谐振微机械盘。 为了增加谐振器Q,使用中空杆,其中杆材料的外部厚度围绕杆的中空区域内部,或者由在杆材料中包含中空空间的多个通孔和/或制造的子结构制成。 测量已经证实,在某些实施方案和操作模式中,Q值可以使用中空芯杆增加2.9倍。

    ACTIVE MANIPULATION OF ELECTROMAGNETIC WAVE PROPAGATION IN METAMATERIALS
    5.
    发明申请
    ACTIVE MANIPULATION OF ELECTROMAGNETIC WAVE PROPAGATION IN METAMATERIALS 审中-公开
    电磁波传播的主动调控

    公开(公告)号:WO2012061345A3

    公开(公告)日:2012-07-05

    申请号:PCT/US2011058721

    申请日:2011-11-01

    CPC classification number: G02B1/002 G01N21/3581 H01P7/082 H01P7/088

    Abstract: An apparatus for controlling propagation of an electromagnetic wave includes a metamaterial having an array of cells, each cell containing a metallic structure having a resonant frequency; a plurality of devices integrated in the metamaterial, each of said devices being in electrical communication with a metallic structure in a cell in the array of cells; and a controller for electrically activating each of said plurality of devices to cause said resonant frequency to change, thereby causing at least one of a permeability and permittivity of the metamaterial to change.

    Abstract translation: 用于控制电磁波传播的装置包括具有单元阵列的超材料,每个单元包含具有谐振频率的金属结构; 集成在超材料中的多个器件,每个所述器件与电池阵列中的电池中的金属结构电连通; 以及用于电激活所述多个器件中的每一个以使所述谐振频率发生变化的控制器,从而导致所述超材料的磁导率和介电常数中的至少一个改变。

    ACTIVE MANIPULATION OF ELECTROMAGNETIC WAVE PROPAGATION IN METAMATERIALS
    7.
    发明申请
    ACTIVE MANIPULATION OF ELECTROMAGNETIC WAVE PROPAGATION IN METAMATERIALS 审中-公开
    电磁波在电磁波传播过程中的主动调控

    公开(公告)号:WO2012061345A2

    公开(公告)日:2012-05-10

    申请号:PCT/US2011/058721

    申请日:2011-11-01

    CPC classification number: G02B1/002 G01N21/3581 H01P7/082 H01P7/088

    Abstract: An apparatus for controlling propagation of an electromagnetic wave includes a metamaterial having an array of cells, each cell containing a metallic structure having a resonant frequency; a plurality of devices integrated in the metamaterial, each of said devices being in electrical communication with a metallic structure in a cell in the array of cells; and a controller for electrically activating each of said plurality of devices to cause said resonant frequency to change, thereby causing at least one of a permeability and permittivity of the metamaterial to change.

    Abstract translation: 用于控制电磁波传播的设备包括具有单元阵列的超材料,每个单元包含具有共振频率的金属结构; 集成在超材料中的多个装置,每个所述装置与单元阵列中的单元中的金属结构电连通; 以及控制器,其用于电激活所述多个器件中的每一个以使所述谐振频率改变,从而导致所述超材料的磁导率和介电常数中的至少一个改变。

    RESONATOR CIRCUIT AND AMPLIFIER CIRCUIT
    8.
    发明申请
    RESONATOR CIRCUIT AND AMPLIFIER CIRCUIT 审中-公开
    谐振器电路和放大器电路

    公开(公告)号:WO2011156379A8

    公开(公告)日:2012-04-19

    申请号:PCT/US2011039451

    申请日:2011-06-07

    CPC classification number: H03F7/04 H03B19/00 H03G3/00

    Abstract: A passive frequency divider in a CMOS process. More specifically, an electrical distributed parametric oscillator to realize a passive CMOS frequency divider with low phase noise. Instead of using active devices, which are the main sources of noise and power consumption, an oscillation at half of the input frequency is sustained by the parametric process based on nonlinear interaction with the input signal. For example, one embodiment is a 20 GHz frequency divider utilizing a CMOS varactor and made in a 0.13 µ?t? CMOS process. In this embodiment: (i) without any dc power consumption, 600 mV differential output amplitude can be achieved for an input amplitude of 600 mV; and (ii) the input frequency ranged from 18.5 GHz to 23.5 GHz with varactor tuning. In this embodiment, the output phase noise is almost 6 dB lower than that of the input signal for all offset frequencies up to 1 MHz. Also, a resonant parametric amplifier with a low noise figure (NF) by exploiting the noise squeezing effect. Noise squeezing occurs through the phase- sensitive amplification process and suppresses one of two quadrature components in input noise. When the input signal is only in the direction of the non-suppressed quadrature component, squeezing can lower that NF by almost 3 dB. The resonant structure of the proposed amplifier achieves the squeezing effect using a low number of LC elements.

    Abstract translation: CMOS工艺中的无源分频器。 更具体地说,是一种电气分布参量振荡器,用于实现具有低相位噪声的无源CMOS分频器。 基于与输入信号的非线性相互作用,通过参数化过程维持输入频率一半的振荡,而不是使用有源器件(噪声和功耗的主要来源)。 例如,一个实施例是使用CMOS变容二极管的20GHz分频器,并且制造成0.13μΩ? CMOS工艺。 在该实施例中:(i)在没有任何直流功耗的情况下,对于600mV的输入幅度可以实现600mV的差分输出幅度; 和(ii)输入频率范围从18.5 GHz到23.5 GHz,并进行变容二极管调谐。 在该实施例中,对于高达1MHz的所有偏移频率,输出相位噪声比输入信号的相位差近6dB。 此外,通过利用噪声压缩效应,具有低噪声系数(NF)的谐振参量放大器。 通过相敏放大过程发生噪声压缩,并抑制输入噪声中的两个正交分量之一。 当输入信号仅处于非抑制正交分量的方向时,压缩可以将NF降低近3 dB。 所提出的放大器的谐振结构使用少量的LC元件实现了压缩效应。

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