公开(公告)号：WO2022056138A2

公开(公告)日：2022-03-17

申请号：PCT/US2021/049679

申请日：2021-09-09

Applicant: RAYTHEON COMPANY

Inventor： SORIC, Jason C. ,  LAROCHE, Jeffrey R. ,  CHUMBES, Eduardo M. ,  PECZALSKI, Adam E.

IPC: H03H9/05 ,  H03H3/02 ,  H03H9/17 ,  H03H9/56 ,  H03H3/04 ,  H01L29/20 ,  H01L29/778 ,  H01L21/02378 ,  H01L21/0254 ,  H01L27/20 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H03F2200/294 ,  H03F2200/451 ,  H03F3/195 ,  H03H2003/023 ,  H03H2003/0442 ,  H03H9/0542 ,  H03H9/174 ,  H03H9/545 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568 ,  H04B1/06 ,  H04B1/10

Abstract: Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform comprises a single crystal base (202) and each of the switching elements comprises at least one of a scandium aluminum nitride (ScAIN) or other Group Ill-Nitride transistor structure (204) fabricated on the single crystal base (202). In these embodiments, each channel filter comprises a multi-layered ScAIN structure (206) comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base (202). The ScAIN layers for each channel filter are based on desired frequency characteristics of an associated one of the RF channels.

公开(公告)号：WO2022212417A2

公开(公告)日：2022-10-06

申请号：PCT/US2022/022405

申请日：2022-03-29

Applicant: RESONANT INC.

Inventor： MCHUGH, Sean

IPC: H04B1/38 ,  H03H9/02 ,  H03H9/13 ,  H03H9/54 ,  H03H9/56 ,  H03H9/02015 ,  H03H9/171 ,  H03H9/564 ,  H03H9/706

Abstract: Diplexers, filter devices, and methods are disclosed. A diplexer includes a first chip comprising series resonators of a high band filter, a second chip comprising shunt resonators of the high band filter and series resonators of a low band filters, and a third chip comprising shunt resonators of the low band filter. The series resonators and the shunt resonators of the high band filter are decoupled transversely-excited film bulk acoustic resonators (DXBARs). The series resonators and the shunt resonators of the low band filter are transversely-excited film bulk acoustic resonators (XBARs).

公开(公告)号：WO2021078916A2

公开(公告)日：2021-04-29

申请号：PCT/EP2020/079840

申请日：2020-10-22

Applicant: VTT TECHNICAL RESEARCH CENTRE OF FINLAND LTD

Inventor： MAKKONEN, Tapani ,  PENSALA, Tuomas ,  YLILAMMI, Markku

IPC: H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/02 ,  H03H9/02015 ,  H03H9/02125 ,  H03H9/02228 ,  H03H9/132 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/54 ,  H03H9/564

Abstract: Acoustic wave filter devices are disclosed. In an embodiment, the device includes an acoustic wave resonator and a reflecting layer located below the acoustic wave resonator. The wave resonator includes an input electrode including a first electrode (612) and a counter electrode, a piezoelectric layer (602) sandwiched between the first electrode and the counter electrode, and an output electrode. The piezoelectric layer has a first region ("Metallized region") covered by the first or the output electrode, and a second region ("Free surface region") not covered by any of the first and the output electrode. The first region has a second order acoustic thickness- shear resonance (TS2) mode dispersion curve with a first minimum frequency, and the second region has a TS2 mode dispersion curve with a second minimum frequency. The reflecting layer's thickness is such that a difference between the first minimum frequency and the second minimum frequency is less than 2 % of a filter center frequency.

公开(公告)号：WO2022214254A2

公开(公告)日：2022-10-13

申请号：PCT/EP2022/055642

申请日：2022-03-04

Applicant: RF360 EUROPE GMBH

Inventor： BYWALEZ, Robert ,  STEINHAEUSSER, Ute

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H3/02 ,  H03H3/08 ,  H01L23/485 ,  H03H2003/021 ,  H03H2003/025 ,  H03H9/02094 ,  H03H9/02149 ,  H03H9/1014 ,  H03H9/131 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564

Abstract: An apparatus and method for making an acoustic filter package where the apparatus includes a base layer (110); a support layer (150) disposed on the base layer; a piezoelectric structure (120) disposed on the support layer; wherein the piezoelectric structure comprises: a piezoelectric layer (122); a top electrode (124) on a top surface of the piezoelectric layer; a bottom electrode (121) on a bottom surface of the piezoelectric layer; a contact pad (123) coupled to the bottom electrode that extends through an opening in the piezoelectric layer and is coupled to the bottom electrode or the top electrode; and a corrosion resistant pad (125) disposed on the contact pad; and a capping structure (131, 132, 133, 134) disposed on the piezoelectric structure.

公开(公告)号：WO2022001861A1

公开(公告)日：2022-01-06

申请号：PCT/CN2021/102315

申请日：2021-06-25

Applicant: 诺思（天津）微系统有限责任公司

Inventor： 庞慰 ,  郝龙 ,  徐洋 ,  张全德 ,  马晓丹 ,  杨清瑞

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/02007 ,  H03H9/171 ,  H03H9/175 ,  H03H9/564

Abstract: 本公开涉及一种体声波谐振器，包括基底；声学镜；底电极；顶电极；和压电层，其中：所述谐振器在顶电极的连接边还包括第一插入层，第一插入层在谐振器的厚度方向上设置在顶电极与基底之间，且所述声学镜的边缘在谐振器的横向方向上处于第一插入层的内端与外端之间；所述谐振器在顶电极的连接边还包括第一不导电介质层，第一不导电介质层在谐振器的厚度方向上设置在第一插入层与顶电极之间，所述第一不导电介质层的内端在横向方向上位于第一插入层的内端的内侧，所述第一不导电介质层的外端在横向方向上与第一插入层的外端齐平或者处于第一插入层的外端的外侧。本公开还涉及一种滤波器以及一种电子设备。