公开(公告)号：WO2021262920A2

公开(公告)日：2021-12-30

申请号：PCT/US2021/038799

申请日：2021-06-24

申请人： CREE, INC.

发明人： LIM, Kwangmo Chris ,  NOORI, Basim ,  MU, Qianli ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  KOMPOSCH, Alexander

IPC分类号： H01L23/66 ,  H01L23/482 ,  H03F3/19 ,  H05K1/02 ,  H01L23/498 ,  H01L23/538 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H03F3/72 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2223/6688 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17107 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32235 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83805 ,  H01L2224/92125 ,  H01L23/047 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/49531 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L2924/1421 ,  H01L2924/161 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/19107 ,  H03F1/0288 ,  H03F1/526 ,  H03F2200/451 ,  H03F3/195 ,  H03F3/211 ,  H05K1/0243 ,  H05K1/113 ,  H05K2201/09627 ,  H05K2201/09636 ,  H05K2201/10545 ,  H05K3/3415 ,  H05K3/3442

摘要： RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

公开(公告)号：WO2021257180A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/028740

申请日：2021-04-23

申请人： MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

发明人： SOM, Shamit ,  ATHERTON, John Stephen ,  STRUBLE, Wayne Mack ,  BARRETT, Jason Matthew ,  YAMUJALA, Nishant R.

IPC分类号： H01L21/8234 ,  H01L23/48 ,  H01L23/528 ,  H01L27/02 ,  H01L27/085 ,  H01L29/417 ,  H03F1/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/20 ,  H01L21/823475 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/5226 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0617 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/778 ,  H03F1/0288 ,  H03F2200/451 ,  H03F3/195

摘要： Integrated semiconductor devices are described. In one example, an integrated device includes first and second transistors formed on a substrate, where the transistors share a terminal metal feature (220) to reduce a size of the integrated device. The terminal metal feature can include a shared source electrode metalization, for example, although other electrode metalizations can be shared. In other aspects, a first width of a gate of the first transistor can be greater than a second width of a gate of the second transistor, and the shared metalization can taper from the first width to the second width. The integrated device can also include a metal ground plane on a backside of the substrate, and the terminal metal feature can also include an in-source via for the shared source electrode metalization. The in-source via can electrically couple the shared source electrode metalization to the metal ground plane.

公开(公告)号：WO2022056138A2

公开(公告)日：2022-03-17

申请号：PCT/US2021/049679

申请日：2021-09-09

申请人： RAYTHEON COMPANY

发明人： SORIC, Jason C. ,  LAROCHE, Jeffrey R. ,  CHUMBES, Eduardo M. ,  PECZALSKI, Adam E.

IPC分类号： H03H9/05 ,  H03H3/02 ,  H03H9/17 ,  H03H9/56 ,  H03H3/04 ,  H01L29/20 ,  H01L29/778 ,  H01L21/02378 ,  H01L21/0254 ,  H01L27/20 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H03F2200/294 ,  H03F2200/451 ,  H03F3/195 ,  H03H2003/023 ,  H03H2003/0442 ,  H03H9/0542 ,  H03H9/174 ,  H03H9/545 ,  H03H9/562 ,  H03H9/564 ,  H03H9/568 ,  H04B1/06 ,  H04B1/10

摘要： Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform comprises a single crystal base (202) and each of the switching elements comprises at least one of a scandium aluminum nitride (ScAIN) or other Group Ill-Nitride transistor structure (204) fabricated on the single crystal base (202). In these embodiments, each channel filter comprises a multi-layered ScAIN structure (206) comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base (202). The ScAIN layers for each channel filter are based on desired frequency characteristics of an associated one of the RF channels.

公开(公告)号：WO2021202674A2

公开(公告)日：2021-10-07

申请号：PCT/US2021/025102

申请日：2021-03-31

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  LIM, Kwangmo Chris ,  KOMPOSCH, Alexander ,  MU, Qianli

IPC分类号： H01L23/66 ,  H01L23/36 ,  H01L23/498 ,  H01L23/522 ,  H01L23/482 ,  H01L23/057 ,  H01L23/495 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/16227 ,  H01L2224/214 ,  H01L23/047 ,  H01L23/13 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/49531 ,  H01L24/19 ,  H01L24/20 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7786 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/1421 ,  H03F1/0288 ,  H03F2200/451 ,  H03F3/195

摘要： A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.

公开(公告)号：WO2021202358A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/024623

申请日：2021-03-29

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  MU, Qianli ,  LIM, Kwangmo Chris ,  WATTS, Michael E. ,  BOKATIUS, Mario ,  KIM, Jangheon

IPC分类号： H01L29/417 ,  H01L23/66 ,  H01L25/16 ,  H03F1/00 ,  H03F3/00 ,  H01L23/00 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/08225 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/08 ,  H01L24/42 ,  H01L24/81 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/778 ,  H01L29/7786 ,  H03F1/565 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H03F3/193 ,  H03F3/195

摘要： RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

公开(公告)号：WO2021202199A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/023916

申请日：2021-03-24

申请人： CREE, INC.

发明人： WATTS, Michael E. ,  BOKATIUS, Mario ,  KIM, Jangheon ,  NOORI, Basim ,  MU, Qianli ,  LIM, Kwangmo Chris ,  MARBELL, Marvin

IPC分类号： H01L23/04 ,  H01L23/047 ,  H01L23/057 ,  H01L23/367 ,  H01L23/482 ,  H01L23/498 ,  H01L23/66 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/0615 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32235 ,  H01L2224/32245 ,  H01L2224/3315 ,  H01L2224/48195 ,  H01L2224/49107 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/49531 ,  H01L24/29 ,  H01L24/32 ,  H01L24/49 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/7786 ,  H01L2924/13064 ,  H01L2924/1421 ,  H01L2924/30111

摘要： RF amplifiers are provided that include an interconnection structure (270) and a Group III nitride-based RF amplifier die (210) that is mounted on top of the interconnection structure. The Group III nitride- based RF amplifier die includes a semiconductor layer structure (230) A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal (222), a drain terminal (224) and a source terminal (226) are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.