公开(公告)号：WO2023066732A1

公开(公告)日：2023-04-27

申请号：PCT/EP2022/078287

申请日：2022-10-11

Applicant: THYSSENKRUPP STEEL EUROPE AG

Inventor： BIENHOLZ, Dr. Stefan

IPC: C23C14/16 ,  C23C14/02 ,  C23C14/24 ,  C23C14/54 ,  C23C14/56 ,  C23C2/00

Abstract: Die Erfindung betrifft ein Verfahren zum Herstellen eines beschichteten Stahlflachprodukts mit folgenden Schritten: - Herstellen oder Bereitstellen eines Stahlsubstrats, - optional Entfetten, - optional Dekapierung, - Applizieren des Korrosionsschutzüberzugs aus Zink oder einer Zinklegierung und unvermeidbaren Verunreinigungen mittels physikalischer Gasphasenabscheidung auf das Stahlsubstrat mit einer Substrattemperatur TSubstrat. Dabei wird das Stahlsubstrat vor dem Applizieren des Korrosionsschutzüberzuges für einen bestimmten Zeitraum einer Vakuumbehandlung unterzogen. Zudem ist der Druck beim Applizieren des Korrosionsschutzüberzuges geeignet beschränkt.

公开(公告)号：WO2023059510A1

公开(公告)日：2023-04-13

申请号：PCT/US2022/045347

申请日：2022-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： OHNO, Kenichi ,  SIVARAMAKRISHNAN, Visweswaren ,  GODET, Ludovic

IPC: C23C14/02 ,  C23C14/56 ,  C23C14/34 ,  C23C14/24 ,  C23C14/564 ,  H01J2237/335 ,  H01J37/32357

Abstract: Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to a system and method of forming an optical device film. In an embodiment, a method is provided for positioning a substrate in a pre-cleaning chamber disposed in a cluster processing system and pre-cleaning the substrate to remove a native oxide layer from one or more surfaces of the substrate. The substrate is then transferred in an air free state to a deposition chamber disposed in the cluster processing system for forming an optical device film layer on the substrate.

公开(公告)号：WO2023024319A1

公开(公告)日：2023-03-02

申请号：PCT/CN2021/135923

申请日：2021-12-07

Applicant: 湘潭宏大真空技术股份有限公司

Inventor： 祝海生 ,  黄国兴 ,  孙桂红 ,  黄乐 ,  梁红 ,  唐红波 ,  左莉

IPC: C23C14/35 ,  C23C14/50 ,  C23C14/56

Abstract: 一种立式长管镀膜设备，包括真空壳体(10)、第一靶架(20)、第二靶架(30)、第三靶架(40)以及工件架(50)，真空壳体(10)上开设有第一舱门(11)、第二舱门(12)以及第三舱门(13)，第一舱门(11)和第二舱门(12)相对设置，真空壳体(10)的内部具有真空腔(14)，第一靶架(20)和第二靶架(30)分别设于第一舱门(11)和第二舱门(12)两侧且第一靶架(20)和第二靶架(30)能够分别沿靠近真空壳体(10)的方向移动以封闭第一靶门和第二靶门，第一靶架(20)和第二靶架(30)上均设置有溅射阴极(90)，工件架(50)设置在第三靶架(40)内，工件架(50)上承载有管状工件(60)，第三靶架(40)能够将工件架(50)通过第三舱门(13)进入真空腔(14)内，该立式长管镀膜设备能够有效提高管状工件的镀膜效率。

公开(公告)号：WO2023020461A1

公开(公告)日：2023-02-23

申请号：PCT/CN2022/112685

申请日：2022-08-16

Applicant: 北京北方华创微电子装备有限公司

Inventor： 杨慧萍 ,  杨帅

IPC: H01L21/67 ,  C23C14/56 ,  C23C14/54

Abstract: 提供一种半导体工艺设备，半导体工艺设备包括第一腔室（100）、第二腔室（200）和第三腔室（300），其中，第一腔室（100）和第二腔室（200）对接且连通设置；第三腔室（300）环绕第二腔室（200）设置，且二者之间形成第一空腔（A），第三腔室（300）开设有控温流体进口（310）和控温流体出口（320），第一空腔（A）用于控温流体流动以调节第二腔室（200）的温度。解决半导体工艺设备中由于带状加热器较难完全贴附在腔室外露的部分，从而导致腔室的局部出现冷点而导致保温效果不理想的问题。

公开(公告)号：WO2023019068A1

公开(公告)日：2023-02-16

申请号：PCT/US2022/074374

申请日：2022-08-01

Applicant: KATEEVA, INC.

Inventor： NORDHOFF, Karl Andrew ,  KO, Alexander Sou-Kang ,  BUCHNER, Christopher

IPC: H01L21/677 ,  H01L51/00 ,  C23C14/56

Abstract: A substrate preparation chamber is described herein. The substrate preparation chamber comprises an enclosure, a rotatable substrate support disposed within the enclosure, and an atmosphere replacement system coupled to the enclosure. The substrate preparation chamber can be used with an inkjet printing system, where the substrate preparation chamber is coupled to a printing enclosure such that a door is operable to place the enclosure of the substrate preparation chamber in fluid communication with the printing enclosure.

公开(公告)号：WO2023285500A1

公开(公告)日：2023-01-19

申请号：PCT/EP2022/069530

申请日：2022-07-13

Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： BANDORF, Ralf

IPC: C23C16/02 ,  C23C16/44 ,  C23C14/56 ,  C23C14/02 ,  H01J37/32

Abstract: Die Erfindung betrifft eine Vorrichtung (1) zur Beschichtung eines Substrates (2) mit einer Vakuumkammer (10) und zumindest einer Vakuumpumpe (11), welche dazu eingerichtet ist, die Vakuumkammer (10) zu evakuieren, und mit zumindest einer Substrathalterung (20), welche innerhalb der Vakuumkammer (10) angeordnet und dazu eingerichtet ist, das zu beschichtende Substrat (2) aufzunehmen, und mit zumindest einer Einrichtung (3) zur Erzeugung einer Beschichtung, welche innerhalb der Vakuumkammer (10) angeordnet ist, wobei die Vakuumkammer (10) weiterhin zumindest eine Reinigungsvorrichtung (4) enthält, welche zumindest eine Adhäsionswalze (40) enthält, welche über eine Oberfläche (201) des Substrates (2) führbar ist und welche dazu eingerichtet ist, auf dem Substrat (2) anhaftende Partikel (25) zu binden. Weiterhin betrifft die Erfindung ein Verfahren zur Beschichtung eines Substrates (2).

公开(公告)号：WO2022197723A1

公开(公告)日：2022-09-22

申请号：PCT/US2022/020412

申请日：2022-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： DOU, Wei ,  CAO, Yong ,  LI, Mingdong ,  LAVAN, Shane ,  RAMALINGAM, Jothilingam ,  LIU, Chengyu

IPC: C23C14/56 ,  C23C14/18 ,  C23C14/04 ,  C23C14/50 ,  C23C14/00

Abstract: Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a plurality of first deposition processes on a corresponding series of substrates disposed on a substrate support in the PVD chamber, wherein the PVD chamber includes a cover ring disposed about the substrate support and having a texturized outer surface, and wherein a silicon nitride (SiN) layer having a first thickness is deposited onto the texturized outer surface during each of the plurality of first deposition processes; and performing a second deposition process on the cover ring between subsets of the plurality of first deposition processes to deposit an amorphous silicon layer having a second thickness onto an underlying silicon nitride (SiN) layer.

公开(公告)号：WO2022125442A1

公开(公告)日：2022-06-16

申请号：PCT/US2021/062019

申请日：2021-12-06

Applicant: APPLIED MATERIALS, INC. [US]/[US]

Inventor： SEVILLA, Alejandro ,  RANGASAMY, Ezhiylmurugan ,  HERLE, Subramanya P. ,  ISHIKAWA, David Masayuki

IPC: H01M4/139 ,  H01M4/04 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/052 ,  C23C14/56 ,  C23C14/34

Abstract: A method and system for forming lithium anode devices are provided. In one embodiment, the methods and systems form pre-lithiated Group-IV alloy-type nanoparticles (NP's), for example, Li-Z where Z is Ge, Si, or Sn. In another embodiment, the methods and systems synthesize Group-IV nanoparticles and alloy the Group-IV nanoparticles with lithium. The Group-IV nanoparticles can be made on demand and premixed with anode materials or coated on anode materials. In yet another embodiment, the methods and systems form lithium metal-free silver carbon ("Ag-C") nanocomposites (NC's). In yet another embodiment, a method utilizing silver (PVD) and carbon (PECVD) co-deposition to make anode coatings that can regulate lithium nucleation energy to minimize dendrite formation is provided.

公开(公告)号：WO2022109009A1

公开(公告)日：2022-05-27

申请号：PCT/US2021/059695

申请日：2021-11-17

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAKRABORTY, Tapash ,  DEEPAK, Nitin ,  GORADIA, Prerna Sonthalia ,  UPADHYE, Bahubali S. ,  BAGUL, Nilesh Chimanrao ,  HERLE, Subramanya P. ,  SIVARAMAKRISHNAN, Visweswaren

IPC: C23C16/44 ,  C23C14/56

Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.

公开(公告)号：WO2022081318A1

公开(公告)日：2022-04-21

申请号：PCT/US2021/051549

申请日：2021-09-22

Applicant: APPLIED MATERIALS, INC.

Inventor： ALLISON, Mathew Dean ,  SAUER, Andreas

IPC: C23C14/56

Abstract: A device for sealing a vacuum chamber is described, the vacuum chamber providing a first volume. The device includes an intermediate volume providing a fluid communication between the first volume and a second volume, a first seal for sealing a first conduit associated with the first volume and sealing the first volume from the intermediate volume, a second seal for sealing a second conduit associated with the second volume and sealing the second volume from the intermediate volume, and a third conduit providing a first fluid path to the intermediate volume.