Invention Grant
- Patent Title: Methods, apparatus and system for providing adjustable fin height for a FinFET device
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Application No.: US15423326Application Date: 2017-02-02
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Publication No.: US10068804B2Publication Date: 2018-09-04
- Inventor: Ruilong Xie , Peng Xu , Chun Wing Yeung
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8234 ; H01L21/311 ; H01L21/28 ; H01L21/02 ; H01L29/66 ; H01L21/321 ; H01L29/08 ; H01L29/417 ; H01L21/66
Abstract:
A method and system are disclosed herein for an adjustable effective fin height in a gate region of a finFET device. Fin structures, each having a first height, a fin, an oxide liner, and a nitride liner, are formed. A first portion of the nitride liner is removed. A first portion of the oxide liner is removed. A second portion of the nitride liner in a gate portion of the finFET. Source/drain(s) are formed, and a nitride spacer between the source/drain and the gate portion is formed. A second portion of the oxide liner is exposed by removing the second portion of the nitride liner, exposing a second portion of the fin, wherein the first and second exposed portions of the fin being an effective fin height in the gate portion.
Public/Granted literature
- US20180218947A1 METHODS, APPARATUS AND SYSTEM FOR PROVIDING ADJUSTABLE FIN HEIGHT FOR A FINFET DEVICE Public/Granted day:2018-08-02
Information query
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