公开(公告)号：US10068804B2

公开(公告)日：2018-09-04

申请号：US15423326

申请日：2017-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong Xie ,  Peng Xu ,  Chun Wing Yeung

IPC: H01L21/00 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/28 ,  H01L21/02 ,  H01L29/66 ,  H01L21/321 ,  H01L29/08 ,  H01L29/417 ,  H01L21/66

CPC classification number: H01L21/823431 ,  H01L21/823425 ,  H01L22/12 ,  H01L22/20 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method and system are disclosed herein for an adjustable effective fin height in a gate region of a finFET device. Fin structures, each having a first height, a fin, an oxide liner, and a nitride liner, are formed. A first portion of the nitride liner is removed. A first portion of the oxide liner is removed. A second portion of the nitride liner in a gate portion of the finFET. Source/drain(s) are formed, and a nitride spacer between the source/drain and the gate portion is formed. A second portion of the oxide liner is exposed by removing the second portion of the nitride liner, exposing a second portion of the fin, wherein the first and second exposed portions of the fin being an effective fin height in the gate portion.

公开(公告)号：US20180218947A1

公开(公告)日：2018-08-02

申请号：US15423326

申请日：2017-02-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong Xie ,  Peng Xu ,  Chun Wing Yeung

IPC: H01L21/8234 ,  H01L21/311 ,  H01L21/28 ,  H01L21/02 ,  H01L29/66 ,  H01L21/321 ,  H01L29/08 ,  H01L29/417 ,  H01L21/66

CPC classification number: H01L21/823431 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823481 ,  H01L22/20 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/66545

Abstract: A method and system are disclosed herein for an adjustable effective fin height in a gate region of a finFET device. Fin structures, each having a first height, a fin, an oxide liner, and a nitride liner, are formed. A first portion of the nitride liner is removed. A first portion of the oxide liner is removed. A second portion of the nitride liner in a gate portion of the finFET. Source/drain(s) are formed, and a nitride spacer between the source/drain and the gate portion is formed. A second portion of the oxide liner is exposed by removing the second portion of the nitride liner, exposing a second portion of the fin, wherein the first and second exposed portions of the fin being an effective fin height in the gate portion.