- 专利标题： Semiconductor devices with robust low-k sidewall spacers and method for producing the same
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申请号： US15913547申请日： 2018-03-06
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公开(公告)号： US10192791B1公开(公告)日： 2019-01-29
- 发明人: Man Gu , Tao Han , Junsic Hong , Jiehui Shu , Asli Sirman , Charlotte Adams , Jinping Liu , Keith Tabakman
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ditthavong & Steiner P.C.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/8238 ; H01L21/3105 ; H01L21/02 ; H01L29/51 ; H01L27/092
摘要：
A method of forming a robust low-k sidewall spacer by exposing an upper portion of the spacer to a thermal and plasma treatment prior to downstream processes and resulting device are provided. Embodiments include providing a pair of gates separated by a canyon trench over a substrate, an EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair; forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and treating the upper portion of the low-k spacers with a thermal and plasma treatment.
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