公开(公告)号：US10192791B1

公开(公告)日：2019-01-29

申请号：US15913547

申请日：2018-03-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Man Gu ,  Tao Han ,  Junsic Hong ,  Jiehui Shu ,  Asli Sirman ,  Charlotte Adams ,  Jinping Liu ,  Keith Tabakman

IPC: H01L21/8242 ,  H01L21/8238 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/51 ,  H01L27/092

Abstract: A method of forming a robust low-k sidewall spacer by exposing an upper portion of the spacer to a thermal and plasma treatment prior to downstream processes and resulting device are provided. Embodiments include providing a pair of gates separated by a canyon trench over a substrate, an EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair; forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and treating the upper portion of the low-k spacers with a thermal and plasma treatment.