Invention Grant
- Patent Title: Magnetoresistance effect element and magnetic memory
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Application No.: US15657148Application Date: 2017-07-22
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Publication No.: US10263180B2Publication Date: 2019-04-16
- Inventor: Hideo Sato , Shinya Ishikawa , Shunsuke Fukami , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno , Tetsuo Endoh
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai-shi, Miyagi
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai-shi, Miyagi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-010186 20150122
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L27/105 ; H01L29/82 ; G11C11/16 ; H01L27/22 ; H01L43/02

Abstract:
A magnetoresistance effect element includes a reference layer made of a ferromagnetic material, a recording layer made of a ferromagnetic material, and a barrier layer disposed between the reference layer and the recording layer. The reference layer and the recording layer have an in-plane magnetization direction parallel to a surface of the layers. The recording layer has a shape that has short axis and long axis perpendicular to the short axis in plan view. A first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer is greater than 0.3 and smaller than 1.
Public/Granted literature
- US20170324030A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2017-11-09
Information query
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