公开(公告)号：US10263180B2

公开(公告)日：2019-04-16

申请号：US15657148

申请日：2017-07-22

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Shinya Ishikawa ,  Shunsuke Fukami ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Hideo Ohno ,  Tetsuo Endoh

IPC: H01L43/08 ,  H01L27/105 ,  H01L29/82 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02

Abstract: A magnetoresistance effect element includes a reference layer made of a ferromagnetic material, a recording layer made of a ferromagnetic material, and a barrier layer disposed between the reference layer and the recording layer. The reference layer and the recording layer have an in-plane magnetization direction parallel to a surface of the layers. The recording layer has a shape that has short axis and long axis perpendicular to the short axis in plan view. A first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer is greater than 0.3 and smaller than 1.

公开(公告)号：US09577182B2

公开(公告)日：2017-02-21

申请号：US15029860

申请日：2014-10-20

Applicant: TOHOKU UNIVERSITY

Inventor： Shoji Ikeda ,  Hideo Sato ,  Shunsuke Fukami ,  Michihiko Yamanouchi ,  Fumihiro Matsukura ,  Hideo Ohno ,  Shinya Ishikawa

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

Abstract: A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D

Abstract translation: 具有热稳定性的磁阻效应元件和磁性存储器，即使是具有良好的接合尺寸，热稳定性为70以上的热稳定性。 磁阻效应元件包括形成参考层的不变磁化方向的第一磁性层，形成记录层的可变磁化方向的第二磁性层和设置在第一和第二磁性层之间的第一非磁性层， 第一和第二磁性层的厚度方向。 第一和第二磁性层中的至少一个在D（nm）和t（nm）之间具有以下关系：D <0.9t + 13，其中D是对应于端部上最长直线的长度的结尺寸 垂直于厚度方向的表面，t是层厚度。 结大小为30nm以下。

公开(公告)号：US11690299B2

公开(公告)日：2023-06-27

申请号：US16768564

申请日：2018-12-14

Applicant: Tohoku University

Inventor： Hideo Sato ,  Shinya Ishikawa ,  Shunsuke Fukami ,  Hideo Ohno ,  Tetsuo Endoh

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

CPC classification number: H10N52/80 ,  H10B61/22 ,  H10N50/85 ,  H10N52/00

Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).