Invention Grant
- Patent Title: Self-protective layer formed on high-k dielectric layers with different materials
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Application No.: US15833721Application Date: 2017-12-06
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Publication No.: US10283417B1Publication Date: 2019-05-07
- Inventor: Ju-Li Huang , Ying-Liang Chuang , Ming-Hsi Yeh , Kuo-Bin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L21/8238 ; H01L27/092 ; H01L21/02

Abstract:
Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a semiconductor device includes a first gate structure and a second gate structure on a substrate; wherein the first gate structure includes a first gate dielectric layer having a first material, and the second gate structure includes a second gate dielectric layer having a second material, the first material being different from the second material, wherein the first and the second gate structures further includes a first and a second self-protective layers disposed on the first and the second gate dielectric layers respectively, wherein the first self-protective layer includes metal phosphate and the second self-protective layer includes boron including complex agents and a first work function tuning layer on the first self-protective layer in the first gate structure.
Information query
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