Invention Grant
- Patent Title: Image sensor device and method of forming same
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Application No.: US15714043Application Date: 2017-09-25
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Publication No.: US10290671B2Publication Date: 2019-05-14
- Inventor: Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H01L23/48

Abstract:
An image sensor device includes a first substrate, an interconnect structure, a conductive layer, a conductive via and a second substrate. The first substrate includes a first region including a pixel array and a second region including a circuit. The interconnect structure is over the pixel array or the circuit. The interconnect structure electrically connecting the circuit to the pixel array. The conductive layer is on the interconnect structure. The conductive via passes through the second substrate and at least partially embedded in the conductive layer. The second substrate is over the conductive layer.
Public/Granted literature
- US20180026069A1 IMAGE SENSOR DEVICE AND METHOD OF FORMING SAME Public/Granted day:2018-01-25
Information query
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