Invention Grant
- Patent Title: Semiconductor structure and fabricating method thereof
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Application No.: US15788803Application Date: 2017-10-20
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Publication No.: US10355135B2Publication Date: 2019-07-16
- Inventor: Che-Cheng Chang , Tung-Wen Cheng , Chang-Yin Chen , Mu-Tsang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/306 ; H01L21/3105 ; H01L21/311 ; H01L29/08 ; H01L29/165 ; H01L29/423 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L21/3213
Abstract:
A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.
Public/Granted literature
- US20180040735A1 SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF Public/Granted day:2018-02-08
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