- 专利标题: Gas flow profile modulated control of overlay in plasma CVD films
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申请号: US15816520申请日: 2017-11-17
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公开(公告)号: US10373822B2公开(公告)日: 2019-08-06
- 发明人: Prashant Kumar Kulshreshtha , Sudha Rathi , Praket P. Jha , Saptarshi Basu , Kwangduk Douglas Lee , Martin J. Seamons , Bok Hoen Kim , Ganesh Balasubramanian , Ziqing Duan , Lei Jing , Mandar B. Pandit
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson + Sheridan LLP
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; H01L21/033 ; H01L21/66 ; C23C16/26 ; C23C16/04 ; H01L21/311
摘要:
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
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