Invention Grant
- Patent Title: Light-emitting element having ZnO transparent electrode and method for manufacturing same
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Application No.: US15757636Application Date: 2016-08-23
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Publication No.: US10411164B2Publication Date: 2019-09-10
- Inventor: Jin Woong Lee , Chan Seob Shin , Keum Ju Lee , Seom Geun Lee , Myoung Hak Yang , Jacob J. Richardson , Evan C. O'Hara
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2015-0125058 20150903; KR10-2015-0125571 20150904; KR10-2015-0134034 20150922
- International Application: PCT/KR2016/009302 WO 20160823
- International Announcement: WO2017/039208 WO 20170309
- Main IPC: H01L33/42
- IPC: H01L33/42 ; G02F1/1335 ; H01L33/10 ; H01L33/32 ; H01L33/62 ; H01L33/38 ; C30B29/16 ; H01L33/00 ; C30B7/00

Abstract:
A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.
Public/Granted literature
- US20180323346A1 LIGHT-EMITTING ELEMENT HAVING ZNO TRANSPARENT ELECTRODE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2018-11-08
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