公开(公告)号：US10741724B2

公开(公告)日：2020-08-11

申请号：US15255059

申请日：2016-09-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jacob J. Richardson ,  Evan C. O'Hara ,  SeomGeun Lee ,  ChanSeop Shin ,  MyeongHak Yang ,  JinWoong Lee

IPC: H01L33/42 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38

Abstract: LED devices having high-quality single crystal ZnO structures for spreading currents and extracting light out of the LEDs are disclosed. In one aspect, a LED device is provided to include a substrate; a first semiconductor layer exhibiting a first conductivity type and formed over the substrate; an active light-emitting structure formed over the first semiconductor layer, the active light-emitting structure operable to emit light under electrical excitation; a second semiconductor layer exhibiting a second conductivity type and formed over the active light-emitting structure; and a single crystal ZnO structure formed over the second semiconductor layer and including a bottom single crystal ZnO portion over the second semiconductor layer and a top single crystal ZnO portion extending from the bottom single crystal ZnO portion, wherein the bottom single crystal ZnO portion is a contiguous single crystal ZnO portion without having voids.

公开(公告)号：US10411164B2

公开(公告)日：2019-09-10

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang ,  Jacob J. Richardson ,  Evan C. O'Hara

IPC: H01L33/42 ,  G02F1/1335 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  H01L33/38 ,  C30B29/16 ,  H01L33/00 ,  C30B7/00

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.