Invention Grant
- Patent Title: FinFET device with a wrap-around silicide source/drain contact structure
-
Application No.: US15949730Application Date: 2018-04-10
-
Publication No.: US10700173B2Publication Date: 2020-06-30
- Inventor: Yi Qi , Hsien-Ching Lo , Hong Yu , Yanping Shen , Wei Hong , Xing Zhang , Ruilong Xie , Haiting Wang , Hui Zhan , Yong Jun Shi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/78 ; H01L29/08 ; H01L29/423 ; H01L29/45 ; H01L21/306 ; H01L29/66 ; H01L21/02 ; H01L21/3105 ; H01L29/165
Abstract:
One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.
Public/Granted literature
- US20190312117A1 FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRUCTURE Public/Granted day:2019-10-10
Information query
IPC分类:
