Invention Grant
- Patent Title: Devices with backside metal structures and methods of formation thereof
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Application No.: US16695999Application Date: 2019-11-26
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Publication No.: US11011409B2Publication Date: 2021-05-18
- Inventor: Oliver Hellmund , Ingo Muri , Johannes Baumgartl , Iris Moder , Thomas Christian Neidhart , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/762 ; H01L29/861 ; H01L29/16 ; H01L29/66 ; H01L21/764 ; H01L29/872 ; H01L21/74 ; H01L21/28 ; H01L21/306 ; H01L21/311 ; H01L29/423 ; H01L29/78 ; H01L21/3105
Abstract:
A semiconductor device includes a first epitaxial layer, a second epitaxial layer disposed below the first epitaxial layer, a conductive layer disposed below and directly contacting the second epitaxial layer, and a plurality of spacers disposed between the second epitaxial layer and the conductive layer. The conductive layer includes a metal. The plurality of spacers include a bulk semiconductor material.
Public/Granted literature
- US20200098617A1 Devices with Backside Metal Structures and Methods of Formation Thereof Public/Granted day:2020-03-26
Information query
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