Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor processing system
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Application No.: US15905739Application Date: 2018-02-26
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Publication No.: US11061333B2Publication Date: 2021-07-13
- Inventor: Yu-Kai Chen , Chia-Hung Chung , Ko-Bin Kao , Su-Yu Yeh , Li-Jen Wu , Zhi-You Ke , Ming-Hung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/40 ; H01L21/027 ; H01L21/66 ; G03F7/039 ; G03F7/004 ; G03F7/32 ; G03F7/16 ; G03F7/30 ; H01L29/66 ; H01L21/67 ; H01L29/78
Abstract:
A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
Public/Granted literature
- US20190146348A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PROCESSING SYSTEM Public/Granted day:2019-05-16
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