Invention Grant
- Patent Title: Multi-gate device
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Application No.: US16016748Application Date: 2018-06-25
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Publication No.: US11145762B2Publication Date: 2021-10-12
- Inventor: Huan-Sheng Wei , Hung-Li Chiang , Chia-Wen Liu , Yi-Ming Sheu , Zhiqiang Wu , Chung-Cheng Wu , Ying-Keung Leung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L21/02 ; H01L21/306 ; H01L21/311 ; H01L29/06 ; H01L29/08 ; H01L29/165 ; H01L29/423 ; H01L29/66
Abstract:
A multi-gate semiconductor device having a fin element, a gate structure over the fin element, an epitaxial source/drain feature adjacent the fin element; a dielectric spacer interposing the gate structure and the epitaxial source/drain feature.
Public/Granted literature
- US20180301560A1 MULTI-GATE DEVICE Public/Granted day:2018-10-18
Information query
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