Invention Grant
- Patent Title: Array boundfary structure to reduce dishing
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Application No.: US16022702Application Date: 2018-06-29
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Publication No.: US11211388B2Publication Date: 2021-12-28
- Inventor: Meng-Han Lin , Te-Hsin Chiu , Wei-Cheng Wu , Li-Feng Teng , Chien-Hung Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/112
- IPC: H01L27/112 ; H01L29/06 ; H01L23/00 ; H01L21/765 ; H01L29/40 ; H01L29/66 ; H01L27/11534 ; H01L21/762 ; H01L27/11524 ; H01L27/11546 ; H01L21/28
Abstract:
A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.
Public/Granted literature
- US20190148389A1 SEMICONDUCTOR STRUCUTRE AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-05-16
Information query
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