Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
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Application No.: US16996334Application Date: 2020-08-18
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Publication No.: US11222949B2Publication Date: 2022-01-11
- Inventor: Seung-Min Song , Woo-Seok Park , Jung-Gil Yang , Geum-Jong Bae , Dong-Il Bae
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0126077 20170928
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L29/06 ; H01L29/423 ; H01L29/08 ; H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/308 ; H01L21/02 ; H01L29/10 ; B82Y10/00 ; H01L29/786 ; H01L29/775 ; H01L29/40 ; H01L21/3105 ; H01L29/16 ; H01L29/165 ; H01L21/8234
Abstract:
Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.
Public/Granted literature
- US20200381514A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2020-12-03
Information query
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