Invention Grant
- Patent Title: Litho-etch-litho-etch with self-aligned blocks
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Application No.: US16682494Application Date: 2019-11-13
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Publication No.: US11239077B2Publication Date: 2022-02-01
- Inventor: Chi-Chun Liu , Nelson Felix , Yann Mignot , Ekmini Anuja De Silva , John Arnold , Allen Gabor
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Abdy Raissinia
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/033 ; H01L21/321 ; H01L21/768
Abstract:
A method for fabricating a semiconductor device includes forming a plurality of mandrel cuts from a first set of mandrels of a base structure using lithography, surrounding the first set of mandrels and a second set of mandrels of the base structure with spacer material to form mandrel-spacer structures, forming a flowable material layer on exposed surfaces of the mandrel-spacer structures, and performing additional processing, including forming a plurality of dielectric trenches within the base structure based on patterns formed in the flowable material layer.
Public/Granted literature
- US20210143013A1 LITHO-ETCH-LITHO-ETCH WITH SELF-ALIGNED BLOCKS Public/Granted day:2021-05-13
Information query
IPC分类:
