公开(公告)号：US11239077B2

公开(公告)日：2022-02-01

申请号：US16682494

申请日：2019-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chi-Chun Liu ,  Nelson Felix ,  Yann Mignot ,  Ekmini Anuja De Silva ,  John Arnold ,  Allen Gabor

IPC: H01L21/4763 ,  H01L21/033 ,  H01L21/321 ,  H01L21/768

Abstract: A method for fabricating a semiconductor device includes forming a plurality of mandrel cuts from a first set of mandrels of a base structure using lithography, surrounding the first set of mandrels and a second set of mandrels of the base structure with spacer material to form mandrel-spacer structures, forming a flowable material layer on exposed surfaces of the mandrel-spacer structures, and performing additional processing, including forming a plurality of dielectric trenches within the base structure based on patterns formed in the flowable material layer.

公开(公告)号：US20240319579A1

公开(公告)日：2024-09-26

申请号：US18187309

申请日：2023-03-21

Applicant: International Business Machines Corporation

Inventor： Allen Gabor ,  Richard C. Johnson ,  Romain Lallement ,  Daniel Schmidt

IPC: G03F1/36 ,  G03F7/00

CPC classification number: G03F1/36 ,  G03F7/70058

Abstract: A photographic lithography method for printing chip sections of a mask to a wafer is provided. The method includes generating the mask including a pattern of rows of the chip sections, each alternating row including half-fields mirrored with respect to corresponding half-fields of an adjacent row, exposing every other row of half-fields with the pattern and the wafer in a first relative orientation based on mirroring of the half-fields and the corresponding half-fields, re-orienting the pattern and the wafer to have a second relative orientation opposite the first relative orientation and exposing remaining rows of the half-fields with the pattern and the wafer in the second relative orientation.

公开(公告)号：US20210143013A1

公开(公告)日：2021-05-13

申请号：US16682494

申请日：2019-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chi-Chun Liu ,  Nelson Felix ,  Yann Mignot ,  Ekmini Anuja De Silva ,  John Arnold ,  Allen Gabor

IPC: H01L21/033 ,  H01L21/321 ,  H01L21/768

Abstract: A method for fabricating a semiconductor device includes forming a plurality of mandrel cuts from a first set of mandrels of a base structure using lithography, surrounding the first set of mandrels and a second set of mandrels of the base structure with spacer material to form mandrel-spacer structures, forming a flowable material layer on exposed surfaces of the mandrel-spacer structures, and performing additional processing, including forming a plurality of dielectric trenches within the base structure based on patterns formed in the flowable material layer.