Invention Grant
- Patent Title: Memory device
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Application No.: US17023617Application Date: 2020-09-17
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Publication No.: US11270981B2Publication Date: 2022-03-08
- Inventor: Mikihiko Ito , Masaru Koyanagi , Masafumi Nakatani , Shinya Okuno , Shigeki Nagasaka , Masahiro Yoshihara , Akira Umezawa , Satoshi Tsukiyama , Kazushige Kawasaki
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: WOPCT/JP2016/078046 20160923
- Main IPC: G11C16/30
- IPC: G11C16/30 ; H01L25/065 ; G11C16/10 ; G11C16/14 ; G11C16/32 ; G11C16/26 ; H01L27/10 ; G11C16/08 ; G11C16/12 ; G11C16/34 ; G11C16/04

Abstract:
According to one embodiment, a memory device includes: a first chip including a first circuit, first and second terminals; a second chip including a second circuit and a third terminal; and an interface chip including first and second voltage generators. The first chip is between the second chip and the interface chip. The first terminal is connected between the first circuit and the first voltage generator. A third end of the second terminal is connected to the third terminal and a fourth end of the second terminal is connected to the second voltage generator. A fifth end of the third terminal is connected to the second circuit and a sixth end of the third terminal is connected to the second voltage generator via the second terminal. The third end overlaps with the sixth end, without overlapping with the fourth end.
Public/Granted literature
- US20210005580A1 MEMORY DEVICE Public/Granted day:2021-01-07
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