Invention Grant
- Patent Title: Semiconductor structure and fabricating method thereof
-
Application No.: US17080084Application Date: 2020-10-26
-
Publication No.: US11342458B2Publication Date: 2022-05-24
- Inventor: Che-Cheng Chang , Tung-Wen Cheng , Chang-Yin Chen , Mu-Tsang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L21/306 ; H01L21/3105 ; H01L21/311 ; H01L21/3213 ; H01L29/423 ; H01L29/08 ; H01L29/49 ; H01L29/165 ; H01L29/66 ; H01L29/51
Abstract:
A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.
Public/Granted literature
- US20210043773A1 Semiconductor Structure and Fabricating Method Thereof Public/Granted day:2021-02-11
Information query
IPC分类:
