Invention Grant
- Patent Title: Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication
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Application No.: US15960218Application Date: 2018-04-23
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Publication No.: US11348970B2Publication Date: 2022-05-31
- Inventor: Kevin O'Brien , Benjamin Buford , Kaan Oguz , Noriyuki Sato , Charles Kuo , Mark Doczy
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/12 ; G11C11/16 ; H01L43/10 ; H01L43/04 ; H01L45/00 ; B82Y25/00
Abstract:
A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.
Public/Granted literature
- US20190326353A1 SPIN ORBIT TORQUE (SOT) MEMORY DEVICE WITH SELF-ALIGNED CONTACTS AND THEIR METHODS OF FABRICATION Public/Granted day:2019-10-24
Information query
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