Invention Grant
- Patent Title: Reducing power consumption in nonvolatile memory due to standby leakage current
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Application No.: US16586957Application Date: 2019-09-28
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Publication No.: US11500446B2Publication Date: 2022-11-15
- Inventor: Richard Fastow , Shankar Natarajan , Chang Wan Ha , Chee Law , Khaled Hasnat , Chuan Lin , Shafqat Ahmed
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F1/32
- IPC: G06F1/32 ; G11C16/04 ; G11C16/30 ; G11C16/32 ; G11C16/34 ; G06F1/3234

Abstract:
A nonvolatile memory supports a standby state where the memory is ready to receive an access command to execute, and a deep power down state where the memory ignores all access commands. The memory can transition from the standby state to the deep power down state in response to a threshold amount of time in the standby state. Thus, the memory can enter the standby state after a command and then transition to the deep power down state after the threshold time.
Public/Granted literature
- US20210096634A1 REDUCING POWER CONSUMPTION IN NONVOLATILE MEMORY DUE TO STANDBY LEAKAGE CURRENT Public/Granted day:2021-04-01
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