公开(公告)号：US11500446B2

公开(公告)日：2022-11-15

申请号：US16586957

申请日：2019-09-28

Applicant: Intel Corporation

Inventor： Richard Fastow ,  Shankar Natarajan ,  Chang Wan Ha ,  Chee Law ,  Khaled Hasnat ,  Chuan Lin ,  Shafqat Ahmed

IPC: G06F1/32 ,  G11C16/04 ,  G11C16/30 ,  G11C16/32 ,  G11C16/34 ,  G06F1/3234

Abstract: A nonvolatile memory supports a standby state where the memory is ready to receive an access command to execute, and a deep power down state where the memory ignores all access commands. The memory can transition from the standby state to the deep power down state in response to a threshold amount of time in the standby state. Thus, the memory can enter the standby state after a command and then transition to the deep power down state after the threshold time.