Invention Grant
- Patent Title: 3D package structure and methods of forming same
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Application No.: US17113676Application Date: 2020-12-07
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Publication No.: US11545465B2Publication Date: 2023-01-03
- Inventor: Meng-Tse Chen , Chung-Shi Liu , Chih-Wei Lin , Hui-Min Huang , Hsuan-Ting Kuo , Ming-Da Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L25/065 ; H01L21/56 ; H01L25/00 ; H01L21/768 ; H01L23/31 ; H01L23/538 ; H01L23/00

Abstract:
An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.
Public/Granted literature
- US20210091047A1 3D Package Structure and Methods of Forming Same Public/Granted day:2021-03-25
Information query
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