Invention Grant
- Patent Title: Wrap-around contact on FinFET
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Application No.: US17322007Application Date: 2021-05-17
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Publication No.: US11854898B2Publication Date: 2023-12-26
- Inventor: Sung-Li Wang , Neng-Kuo Chen , Ding-Kang Shih , Meng-Chun Chang , Yi-An Lin , Gin-Chen Huang , Chen-Feng Hsu , Hau-Yu Lin , Chih-Hsin Ko , Sey-Ping Sun , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US14257809 2014.04.21
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L21/8238 ; H01L29/165 ; H01L29/161 ; H01L29/16 ; H01L29/06 ; H01L29/417 ; H01L27/088 ; H01L29/423 ; H01L29/51
Abstract:
A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
Public/Granted literature
- US20210272849A1 Wrap-Around Contact on FinFET Public/Granted day:2021-09-02
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