公开(公告)号：US20210272849A1

公开(公告)日：2021-09-02

申请号：US17322007

申请日：2021-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sung-Li Wang ,  Neng-Kuo Chen ,  Ding-Kang Shih ,  Meng-Chun Chang ,  Yi-An Lin ,  Gin-Chen Huang ,  Chen-Feng Hsu ,  Hau-Yu Lin ,  Chih-Hsin Ko ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/161 ,  H01L29/16 ,  H01L29/06 ,  H01L29/417 ,  H01L27/088 ,  H01L29/423 ,  H01L29/51

Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.

公开(公告)号：US11854898B2

公开(公告)日：2023-12-26

申请号：US17322007

申请日：2021-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sung-Li Wang ,  Neng-Kuo Chen ,  Ding-Kang Shih ,  Meng-Chun Chang ,  Yi-An Lin ,  Gin-Chen Huang ,  Chen-Feng Hsu ,  Hau-Yu Lin ,  Chih-Hsin Ko ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC: H01L21/78 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/161 ,  H01L29/16 ,  H01L29/06 ,  H01L29/417 ,  H01L27/088 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L21/823431 ,  H01L21/823418 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823814 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/1608 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/42364 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854 ,  H01L2029/7858

Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.