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    Self aligned contact formation
    1.
    发明授权
    Self aligned contact formation 有权
    自对准接触形成

    公开(公告)号：US09368446B2

    公开(公告)日：2016-06-14

    申请号：US14583864

    申请日：2014-12-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L27/088 ,  H01L23/528 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L23/532 ,  H01L29/49

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

    SELF ALIGNED CONTACT FORMATION
    2.
    发明申请
    SELF ALIGNED CONTACT FORMATION 有权
    自我对齐的联系形式

    公开(公告)号：US20150108651A1

    公开(公告)日：2015-04-23

    申请号：US14583864

    申请日：2014-12-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-Chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L23/528 ,  H01L23/532 ,  H01L29/49 ,  H01L27/088

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

    Chemical mechanical polishing method using slurry composition containing N-oxide compound
    4.
    发明授权
    Chemical mechanical polishing method using slurry composition containing N-oxide compound 有权
    使用含有N-氧化物的浆料组合物的化学机械抛光方法

    公开(公告)号：US09416297B2

    公开(公告)日：2016-08-16

    申请号：US14078797

    申请日：2013-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

    IPC: C09G1/02 ,  C09G1/04

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

    Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.

    Abstract translation: 本公开涉及一种化学机械抛光（CMP）浆料组合物，其提供高金属与电介质材料的选择性以及低的金属凹陷形成速率。 在一些实施方案中，所公开的浆料组合物具有氧化剂和蚀刻抑制剂。 氧化剂具有一个或多个氧分子的化合物。 蚀刻抑制剂具有氮氧化合物。 蚀刻抑制剂降低金属和电介质材料（例如，氧化物）去除的速率，但是以降低介电材料去除速率更大的方式这样做，以便为浆料组合物提供高金属（例如， ，锗）到介电材料去除选择性和低的金属凹陷形成速率。

    In-situ metal gate recess process for self-aligned contact application
    5.
    发明授权
    In-situ metal gate recess process for self-aligned contact application 有权
    用于自对准接触应用的原位金属浇口凹槽工艺

    公开(公告)号：US08940597B2

    公开(公告)日：2015-01-27

    申请号：US13792258

    申请日：2013-03-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Gin-Chen Huang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/8238 ,  H01L29/40

    CPC classification number: H01L29/401 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/67207 ,  H01L21/67219

    Abstract: A method of producing a metal gate structure. The method includes forming a gate structure above a semiconductor substrate and performing one or more chemical metal planarization (CMP) processes to planarize the formed gate structure using a CMP tool. An in situ gate etching process is performed in a CMP cleaner of the CMP tool to form a gate recess. A contact etch stop layer (CESL) can then be deposited in the formed gate recess and one or more CMP processes performed to planarize the CESL.

    Abstract translation: 一种制造金属栅极结构的方法。 该方法包括在半导体衬底之上形成栅极结构，并执行一个或多个化学金属平面化（CMP）工艺，以使用CMP工具对形成的栅极结构进行平坦化。 在CMP工具的CMP清洁器中执行原位栅极蚀刻工艺以形成栅极凹槽。 然后可以将接触蚀刻停止层（CESL）沉积在所形成的栅极凹部中，并执行一个或多个CMP工艺以平坦化CESL。

    Method for removing hard mask oxide and making gate structure of semiconductor devices
    9.
    发明授权
    Method for removing hard mask oxide and making gate structure of semiconductor devices 有权
    去除硬掩模氧化物并制造半导体器件的栅极结构的方法

    公开(公告)号：US09337103B2

    公开(公告)日：2016-05-10

    申请号：US13707769

    申请日：2012-12-07

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yi-An Lin ,  Chun-Wei Chang ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/3205 ,  H01L21/8234

    CPC classification number: H01L21/823437

    Abstract: A method includes forming a first gate above a semiconductor substrate, forming a hard mask on the first gate, and forming a contact etch stop layer (CESL) on the hard mask. No hard mask is removed between the step of forming the hard mask and the step of forming the CESL. The method further includes forming an interlayer dielectric (ILD) layer over the CESL, and performing one or more CMP processes to planarize the ILD layer, remove the CESL on the hard mask, and remove at least one portion of the hard mask.

    Abstract translation: 一种方法包括在半导体衬底上形成第一栅极，在第一栅极上形成硬掩模，以及在硬掩模上形成接触蚀刻停止层（CESL）。 在形成硬掩模的步骤和形成CESL的步骤之间没有去除硬掩模。 该方法还包括在CESL上形成层间电介质层（ILD）层，以及执行一个或多个CMP工艺以使ILD层平坦化，去除硬掩模上的CESL，以及去除硬掩模的至少一部分。

    CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND
    10.
    发明申请
    CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND 有权
    使用含有氧化镍化合物的浆料组合物的化学机械抛光方法

    公开(公告)号：US20150129795A1

    公开(公告)日：2015-05-14

    申请号：US14078797

    申请日：2013-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

    IPC: C09G1/02 ,  C09G1/04

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

    Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.

    Abstract translation: 本公开涉及一种化学机械抛光（CMP）浆料组合物，其提供高金属与电介质材料的选择性以及低的金属凹陷形成速率。 在一些实施方案中，所公开的浆料组合物具有氧化剂和蚀刻抑制剂。 氧化剂具有一个或多个氧分子的化合物。 蚀刻抑制剂具有氮氧化合物。 蚀刻抑制剂降低金属和电介质材料（例如，氧化物）去除的速率，但是以降低介电材料去除速率更大的方式这样做，以便为浆料组合物提供高金属（例如， ，锗）到介电材料去除选择性和低的金属凹陷形成速率。

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