Invention Grant
- Patent Title: Gradient protection layer in MTJ manufacturing
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Application No.: US17869335Application Date: 2022-07-20
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Publication No.: US11856865B2Publication Date: 2023-12-26
- Inventor: Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16170750 2018.10.25
- Main IPC: H10N50/01
- IPC: H10N50/01 ; H10N50/80

Abstract:
A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
Public/Granted literature
- US20220367794A1 Gradient Protection Layer in MTJ Manufacturing Public/Granted day:2022-11-17
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