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公开(公告)号：US12219879B2
公开(公告)日：2025-02-04
申请号：US18521399
申请日：2023-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US20250133967A1
公开(公告)日：2025-04-24
申请号：US19001145
申请日：2024-12-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US20240381786A1
公开(公告)日：2024-11-14
申请号：US18781095
申请日：2024-07-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Feng Yin , An-Shen Chang , Han-Ting Tsai , Qiang Fu
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
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公开(公告)号：US11856865B2
公开(公告)日：2023-12-26
申请号：US17869335
申请日：2022-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US11665977B2
公开(公告)日：2023-05-30
申请号：US16887244
申请日：2020-05-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Feng Yin , An-Shen Chang , Han-Ting Tsai , Qiang Fu
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1655 , G11C11/1657 , H01L27/228 , H01L43/12
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
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Patent Agency Ranking
公开(公告)号：US20210376228A1
公开(公告)日：2021-12-02
申请号：US16887244
申请日：2020-05-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Feng Yin , An-Shen Chang , Han-Ting Tsai , Qiang Fu
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
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公开(公告)号：US20240099150A1
公开(公告)日：2024-03-21
申请号：US18521399
申请日：2023-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US20220367794A1
公开(公告)日：2022-11-17
申请号：US17869335
申请日：2022-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US11411176B2
公开(公告)日：2022-08-09
申请号：US17120613
申请日：2020-12-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Shu Chen , Sin-Yi Yang , Chen-Jung Wang , Chien Chung Huang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
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公开(公告)号：US12274181B2
公开(公告)日：2025-04-08
申请号：US18302538
申请日：2023-04-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yen Peng , Yu-Feng Yin , An-Shen Chang , Han-Ting Tsai , Qiang Fu
Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
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